IRF3205STRLPBF
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Infineon Technologies IRF3205STRLPBF

Manufacturer No:
IRF3205STRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 110A D2PAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The IRF3205STRLPBF is a high-performance N-channel power MOSFET produced by Infineon Technologies. This device is designed to provide high efficiency and reliability in a variety of power management applications. With its robust construction and advanced semiconductor technology, the IRF3205STRLPBF is suitable for use in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)55 V
ID (Continuous Drain Current)110 A
PD (Power Dissipation)200 W
VGS(th) (Gate-Source Threshold Voltage)2.0 - 4.0 V
RDS(on) (On-Resistance)1.8 mΩ (typical at VGS = 10 V)
PackageTO-263 (D2PAK)

Key Features

  • High current capability of up to 110 A
  • Low on-resistance (RDS(on)) of 1.8 mΩ (typical at VGS = 10 V)
  • High power dissipation of 200 W
  • Robust TO-263 (D2PAK) package for reliable thermal performance
  • Wide operating voltage range up to 55 V

Applications

The IRF3205STRLPBF is versatile and can be used in various power management and switching applications, including:

  • DC-DC converters
  • Motor control and drives
  • Power supplies
  • Automotive systems
  • Industrial power systems

Q & A

  1. What is the maximum drain-source voltage of the IRF3205STRLPBF?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the continuous drain current rating of the IRF3205STRLPBF?
    The continuous drain current (ID) is 110 A.
  3. What is the typical on-resistance of the IRF3205STRLPBF?
    The typical on-resistance (RDS(on)) is 1.8 mΩ at VGS = 10 V.
  4. What package type is the IRF3205STRLPBF available in?
    The IRF3205STRLPBF is available in the TO-263 (D2PAK) package.
  5. What are some common applications for the IRF3205STRLPBF?
    Common applications include DC-DC converters, motor control and drives, power supplies, automotive systems, and industrial power systems.
  6. What is the maximum power dissipation of the IRF3205STRLPBF?
    The maximum power dissipation (PD) is 200 W.
  7. What is the gate-source threshold voltage range of the IRF3205STRLPBF?
    The gate-source threshold voltage (VGS(th)) range is 2.0 - 4.0 V.
  8. Is the IRF3205STRLPBF suitable for high-current applications?
    Yes, the IRF3205STRLPBF is designed for high-current applications with a rating of up to 110 A.
  9. Where can I find detailed specifications for the IRF3205STRLPBF?
    Detailed specifications can be found on the official Infineon Technologies website, as well as on distributor websites such as Digi-Key, Mouser, and Farnell.
  10. What are the benefits of using the IRF3205STRLPBF in power management applications?
    The benefits include high efficiency, low on-resistance, and robust thermal performance, making it suitable for demanding power management tasks.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:146 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3247 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
IRF3205LPBF
IRF3205LPBF
MOSFET N-CH 55V 110A TO262
IRF3205SPBF
IRF3205SPBF
MOSFET N-CH 55V 110A D2PAK
IRF3205STRRPBF
IRF3205STRRPBF
MOSFET N-CH 55V 110A D2PAK

Similar Products

Part Number IRF3205STRLPBF IRF3205ZSTRLPBF IRF3205STRRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 75A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V 6.5mOhm @ 66A, 10V 8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V 110 nC @ 10 V 146 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3247 pF @ 25 V 3450 pF @ 25 V 3247 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 170W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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