IPW60R060P7XKSA1
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Infineon Technologies IPW60R060P7XKSA1

Manufacturer No:
IPW60R060P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 600V 48A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The IPW60R060P7XKSA1 is a 600V CoolMOS™ P7 superjunction (SJ) MOSFET from Infineon Technologies. It is the successor to the 600V CoolMOS™ P6 series, designed to balance high efficiency with ease of use in the design process. This MOSFET is part of the 7th generation CoolMOS™ platform, known for its best-in-class RonxQG and RonxQoss figures of merit, ensuring high efficiency in various applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600V
ID (Continuous Drain Current)48A
RDS(on) (On-State Resistance)60mΩ
QG (Gate Charge)Inherently low
ESD Ruggedness≥ 2kV (HBM class 2)
PackageTO-247

Key Features

  • Efficiency: Excellent figures of merit (FOM) for RDS(on)xQG and RDS(on)xQoss, enabling higher efficiency.
  • Ease-of-use: Integrated gate resistor (RG), rugged body diode, and wide portfolio in through-hole and surface mount packages.
  • Robustness: ESD ruggedness of ≥ 2kV (HBM class 2) and suitability for both hard and resonant switching topologies such as PFC and LLC.
  • Versatility: Available in standard grade and industrial grade parts, suitable for consumer and industrial applications.

Applications

  • TV power supply
  • Industrial SMPS (Switch-Mode Power Supplies)
  • Server power supplies
  • Telecom power supplies
  • Lighting systems
  • Motor control
  • Power supplies
  • Renewable energy systems.

Q & A

  1. What is the drain-source voltage rating of the IPW60R060P7XKSA1 MOSFET?
    The drain-source voltage rating is 600V.
  2. What is the continuous drain current of the IPW60R060P7XKSA1?
    The continuous drain current is 48A.
  3. What is the on-state resistance (RDS(on)) of the IPW60R060P7XKSA1?
    The on-state resistance is 60mΩ.
  4. What are the key figures of merit for the IPW60R060P7XKSA1?
    The key figures of merit include excellent RDS(on)xQG and RDS(on)xQoss.
  5. Is the IPW60R060P7XKSA1 ESD rugged?
    Yes, it has an ESD ruggedness of ≥ 2kV (HBM class 2).
  6. What types of switching topologies is the IPW60R060P7XKSA1 suitable for?
    It is suitable for both hard and resonant switching topologies such as PFC and LLC.
  7. What are some common applications of the IPW60R060P7XKSA1?
    Common applications include TV power supply, industrial SMPS, server power supplies, telecom power supplies, lighting systems, motor control, power supplies, and renewable energy systems.
  8. What package types are available for the IPW60R060P7XKSA1?
    The IPW60R060P7XKSA1 is available in TO-247 packages.
  9. Does the IPW60R060P7XKSA1 have an integrated gate resistor?
    Yes, it has an integrated gate resistor (RG).
  10. Is the IPW60R060P7XKSA1 available in different grades?
    Yes, it is available in both standard grade and industrial grade parts).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id:4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2895 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):164W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R060P7XKSA1 IPW60R080P7XKSA1 IPW60R060C7XKSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 37A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 15.9A, 10V 80mOhm @ 11.8A, 10V 60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA 4V @ 590µA 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 51 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2895 pF @ 400 V 2180 pF @ 400 V 2850 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 164W (Tc) 129W (Tc) 162W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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