Overview
The IPB042N10N3GATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies, part of their OptiMOS™ family. This device is designed to offer superior solutions for high-efficiency, high-power-density Switch-Mode Power Supplies (SMPS). It features excellent switching performance, very low on-resistance (RDS(on)), and low gate charge (Qg and Qgd), making it ideal for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS | 100 | V |
| RDS(on), max | 4.2 | mΩ |
| ID | 137 | A |
| Operating Temperature | 175 | °C |
| Gate-Source Leakage Current (IGSS) | -1 | 100 nA |
| Gate Resistance (RG) | 1.4 | Ω |
| Transconductance (gfs) | 73 - 145 | S |
Key Features
- Excellent switching performance
- World’s lowest RDS(on)
- Very low Qg and Qgd
- Excellent gate charge x RDS(on) product (FOM)
- RoHS compliant and halogen-free
- MSL1 rated 2
- Ideal for high-frequency switching and synchronous rectification
Applications
- Synchronous rectification for AC-DC SMPS
- Motor control for 48 V–80 V systems (e.g., domestic vehicles, power tools, trucks)
- Isolated DC-DC converters (telecom and datacom systems)
- Or-ing switches and circuit breakers in 48 V systems
- Class D audio amplifiers
- Uninterruptable power supplies (UPS)
Q & A
- What is the maximum drain-source voltage (VDS) of the IPB042N10N3GATMA1?
The maximum drain-source voltage (VDS) is 100 V. - What is the maximum on-resistance (RDS(on)) of this MOSFET?
The maximum on-resistance (RDS(on)) is 4.2 mΩ. - What is the maximum drain current (ID) of the IPB042N10N3GATMA1?
The maximum drain current (ID) is 137 A. - Is the IPB042N10N3GATMA1 RoHS compliant?
Yes, the IPB042N10N3GATMA1 is RoHS compliant and halogen-free. - What are some of the key applications of this MOSFET?
Key applications include synchronous rectification for AC-DC SMPS, motor control, isolated DC-DC converters, Or-ing switches, Class D audio amplifiers, and UPS. - What is the operating temperature range of the IPB042N10N3GATMA1?
The operating temperature range is up to 175 °C. - What package type is used for the IPB042N10N3GATMA1?
The package type is PG-TO 263-3. - What are the benefits of using the IPB042N10N3GATMA1?
The benefits include increased efficiency, highest power density, less paralleling required, smallest board-space consumption, and easy-to-design products. - Is the IPB042N10N3GATMA1 suitable for high-frequency switching?
Yes, it is ideal for high-frequency switching and synchronous rectification. - What is the gate-source leakage current (IGSS) of the IPB042N10N3GATMA1?
The gate-source leakage current (IGSS) is -1 × 100 nA.
