BSC014N06NSSCATMA1
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Infineon Technologies BSC014N06NSSCATMA1

Manufacturer No:
BSC014N06NSSCATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 261A WSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BSC014N06NSSCATMA1 is a high-performance N-Channel MOSFET produced by Infineon Technologies. This component is part of Infineon's OptiMOS™ family, known for its advanced technology and robust design. The MOSFET is optimized for high-performance applications, particularly in synchronous rectification and other switched-mode power supplies (SMPS). It features a SuperSO8 5 x 6 package, which offers high power density and improved mechanical robustness.

Key Specifications

ParameterValue
Channel TypeN-Channel
Drain-Source Voltage (Vds)60 V
Drain Current (Id)240 A
On-Resistance (Rds(on))Typically low, optimized for high performance
Package TypeSuperSO8 5 x 6
Pins8
Junction Temperature (Tj)Up to 175°C
Avalanche Tested100% avalanche tested

Key Features

  • Optimized for high-performance SMPS, especially in synchronous rectification.
  • Low on-resistance (Rds(on)) for reduced losses and improved efficiency.
  • High power density in a compact SuperSO8 5 x 6 package.
  • 100% avalanche tested for reliability.
  • High junction temperature rating up to 175°C.
  • Reduced overshoot in SR applications.

Applications

  • Switched-mode power supplies (SMPS).
  • Synchronous rectification.
  • Telecom and server power supplies.
  • Battery management systems.
  • Variable Frequency Drives (VFD) and other drive applications.
  • Class D audio systems.

Q & A

  1. What is the drain-source voltage rating of the BSC014N06NSSCATMA1?
    The drain-source voltage (Vds) rating is 60 V.
  2. What is the maximum drain current of the BSC014N06NSSCATMA1?
    The maximum drain current (Id) is 240 A.
  3. What package type does the BSC014N06NSSCATMA1 use?
    The component uses a SuperSO8 5 x 6 package.
  4. Is the BSC014N06NSSCATMA1 100% avalanche tested?
    Yes, it is 100% avalanche tested.
  5. What are the typical applications of the BSC014N06NSSCATMA1?
    Typical applications include SMPS, synchronous rectification, telecom and server power supplies, battery management systems, and VFDs.
  6. What is the maximum junction temperature of the BSC014N06NSSCATMA1?
    The maximum junction temperature (Tj) is up to 175°C.
  7. Why is the SuperSO8 5 x 6 package beneficial?
    The SuperSO8 5 x 6 package offers high power density and improved mechanical robustness.
  8. Does the BSC014N06NSSCATMA1 have low on-resistance?
    Yes, it has a typically low on-resistance (Rds(on)) optimized for high performance.
  9. Is the BSC014N06NSSCATMA1 suitable for high-temperature operations?
    Yes, it is suitable for operations up to a junction temperature of 175°C.
  10. What are the benefits of using the BSC014N06NSSCATMA1 in SMPS applications?
    The benefits include reduced losses, improved efficiency, and reduced overshoot in SR applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:261A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.3V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8125 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-WSON-8-2
Package / Case:8-PowerWDFN
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