DMG2305UX-7
  • Share:

Diodes Incorporated DMG2305UX-7

Manufacturer No:
DMG2305UX-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DMG2305UX-7 is a P-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET is packaged in a SOT-23-3 (SC-59, TO-236) surface mount package and is fully RoHS compliant, halogen and antimony free, and suitable for automotive applications requiring specific change control.

Key Specifications

CharacteristicSymbolValueUnit
Drain-Source VoltageVdss-20V
Gate-Source VoltageVgss±8V
Continuous Drain Current (TA = +25°C)ID-4.2A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)IDM-15A
On-State Resistance (RDS(on))RDS(on)52mΩ @ VGS = -4.5V
Input Capacitance (Ciss)Ciss808 pF @ VDS = 15VpF
Gate Charge (Qg)Qg10.2 nC @ VGS = -4.5VnC
Power Dissipation (PD)PD1.4 WW
Thermal Resistance, Junction to Ambient (RθJA)RθJA90 °C/W°C/W
Operating Temperature RangeTJ-55°C to 150°C°C

Key Features

  • Low On-Resistance (RDS(on))
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free
  • Ideal for high-efficiency power management applications

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters
  • Motor Controls
  • Automotive applications requiring specific change control

Q & A

  1. What is the drain-source voltage rating of the DMG2305UX-7? The drain-source voltage rating is -20V.
  2. What is the maximum on-state resistance (RDS(on)) of the DMG2305UX-7? The maximum on-state resistance is 52mΩ at VGS = -4.5V.
  3. What is the input capacitance (Ciss) of the DMG2305UX-7? The input capacitance is 808 pF at VDS = 15V.
  4. What is the gate charge (Qg) of the DMG2305UX-7? The gate charge is 10.2 nC at VGS = -4.5V.
  5. What is the power dissipation (PD) of the DMG2305UX-7? The power dissipation is 1.4 W.
  6. What is the thermal resistance, junction to ambient (RθJA), of the DMG2305UX-7? The thermal resistance is 90 °C/W.
  7. What are the typical applications of the DMG2305UX-7? Typical applications include backlighting, power management functions, DC-DC converters, motor controls, and automotive applications.
  8. Is the DMG2305UX-7 RoHS compliant? Yes, the DMG2305UX-7 is totally lead-free and fully RoHS compliant.
  9. What is the operating temperature range of the DMG2305UX-7? The operating temperature range is -55°C to 150°C.
  10. What is the package type of the DMG2305UX-7? The package type is SOT-23-3 (SC-59, TO-236) surface mount.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.2 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:808 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.43
1,460

Please send RFQ , we will respond immediately.

Same Series
DMG2305UX-7
DMG2305UX-7
MOSFET P-CH 20V 4.2A SOT23

Similar Products

Part Number DMG2305UX-7 DMG2305UXQ-7
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 52mOhm @ 4.2A, 4.5V 52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.2 nC @ 4.5 V 10.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 808 pF @ 15 V 808 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAS40BRW-7
BAS40BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BZX84C24S-7-F
BZX84C24S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 24V SOT363
BZT52HC5V1WF-7
BZT52HC5V1WF-7
Diodes Incorporated
DIODE ZENER 5.1V 375MW SOD123F
BZX84B11-7-F
BZX84B11-7-F
Diodes Incorporated
DIODE ZENER 11V 350MW SOT23
BZT52HC6V2WF-7
BZT52HC6V2WF-7
Diodes Incorporated
DIODE ZENER 6.2V 375MW SOD123F
BZX84C27-7-G
BZX84C27-7-G
Diodes Incorporated
DIODE ZENER
BC846BW-7-F
BC846BW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
BC857BFZ-7B
BC857BFZ-7B
Diodes Incorporated
TRANS PNP 45V 0.1A 3DFN
BCV46TC
BCV46TC
Diodes Incorporated
TRANS PNP DARL 60V 0.5A SOT23-3
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
BSS123ATC
BSS123ATC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353