DMG2305UX-7
  • Share:

Diodes Incorporated DMG2305UX-7

Manufacturer No:
DMG2305UX-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DMG2305UX-7 is a P-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET is packaged in a SOT-23-3 (SC-59, TO-236) surface mount package and is fully RoHS compliant, halogen and antimony free, and suitable for automotive applications requiring specific change control.

Key Specifications

CharacteristicSymbolValueUnit
Drain-Source VoltageVdss-20V
Gate-Source VoltageVgss±8V
Continuous Drain Current (TA = +25°C)ID-4.2A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)IDM-15A
On-State Resistance (RDS(on))RDS(on)52mΩ @ VGS = -4.5V
Input Capacitance (Ciss)Ciss808 pF @ VDS = 15VpF
Gate Charge (Qg)Qg10.2 nC @ VGS = -4.5VnC
Power Dissipation (PD)PD1.4 WW
Thermal Resistance, Junction to Ambient (RθJA)RθJA90 °C/W°C/W
Operating Temperature RangeTJ-55°C to 150°C°C

Key Features

  • Low On-Resistance (RDS(on))
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free
  • Ideal for high-efficiency power management applications

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters
  • Motor Controls
  • Automotive applications requiring specific change control

Q & A

  1. What is the drain-source voltage rating of the DMG2305UX-7? The drain-source voltage rating is -20V.
  2. What is the maximum on-state resistance (RDS(on)) of the DMG2305UX-7? The maximum on-state resistance is 52mΩ at VGS = -4.5V.
  3. What is the input capacitance (Ciss) of the DMG2305UX-7? The input capacitance is 808 pF at VDS = 15V.
  4. What is the gate charge (Qg) of the DMG2305UX-7? The gate charge is 10.2 nC at VGS = -4.5V.
  5. What is the power dissipation (PD) of the DMG2305UX-7? The power dissipation is 1.4 W.
  6. What is the thermal resistance, junction to ambient (RθJA), of the DMG2305UX-7? The thermal resistance is 90 °C/W.
  7. What are the typical applications of the DMG2305UX-7? Typical applications include backlighting, power management functions, DC-DC converters, motor controls, and automotive applications.
  8. Is the DMG2305UX-7 RoHS compliant? Yes, the DMG2305UX-7 is totally lead-free and fully RoHS compliant.
  9. What is the operating temperature range of the DMG2305UX-7? The operating temperature range is -55°C to 150°C.
  10. What is the package type of the DMG2305UX-7? The package type is SOT-23-3 (SC-59, TO-236) surface mount.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.2 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:808 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.43
1,460

Please send RFQ , we will respond immediately.

Same Series
DMG2305UX-7
DMG2305UX-7
MOSFET P-CH 20V 4.2A SOT23

Similar Products

Part Number DMG2305UX-7 DMG2305UXQ-7
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 52mOhm @ 4.2A, 4.5V 52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.2 nC @ 4.5 V 10.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 808 pF @ 15 V 808 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAS40TW-7-F
BAS40TW-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAT54ST-7-F
BAT54ST-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAV170T-7
BAV170T-7
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT523
MBR10100CS2TR-E1
MBR10100CS2TR-E1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO263
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZT52HC3V6WF-7
BZT52HC3V6WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C16W-7-F
BZX84C16W-7-F
Diodes Incorporated
DIODE ZENER 16V 200MW SOT323
BZX84C3V9-7-G
BZX84C3V9-7-G
Diodes Incorporated
DIODE ZENER
BZX84C47-7
BZX84C47-7
Diodes Incorporated
DIODE ZENER 47V 350MW SOT23-3
BC857AT-7-F
BC857AT-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT523
BC857BT-7-F
BC857BT-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT523
BCP5416QTA
BCP5416QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T