Overview
The STWA72N60DM2AG is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast-recovery diode series. This device is designed for high-efficiency converters and is particularly suited for bridge topologies and ZVS phase-shift converters. It features low on-resistance, extremely low gate charge, and input capacitance, making it ideal for demanding applications. The MOSFET is AEC-Q101 qualified, ensuring its reliability in automotive and other rigorous environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STWA72N60DM2AG | |
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) max. (Static Drain-Source On-Resistance) | 42 | mΩ |
| ID (Continuous Drain Current at Tcase = 25 °C) | 66 | A |
| PTOT (Total Dissipation at Tcase = 25 °C) | 446 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| Tj (Operating Junction Temperature Range) | -55 to 150 | °C |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| dv/dt (MOSFET dv/dt Ruggedness) | 50 | V/ns |
| Package | TO-247 long leads |
Key Features
- AEC-Q101 qualified for automotive applications
- Fast-recovery body diode with very low recovery charge (Qrr) and time (trr)
- Extremely low gate charge and input capacitance
- Low on-resistance (RDS(on))
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected gate
Applications
- Switching applications
- High-efficiency converters
- Bridge topologies
- ZVS phase-shift converters
- Automotive and industrial power systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STWA72N60DM2AG?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STWA72N60DM2AG?
The typical on-resistance (RDS(on)) is 37 mΩ.
- What is the continuous drain current (ID) at Tcase = 25 °C?
The continuous drain current (ID) at Tcase = 25 °C is 66 A.
- Is the STWA72N60DM2AG AEC-Q101 qualified?
- What is the package type of the STWA72N60DM2AG?
The package type is TO-247 long leads.
- What are the key features of the fast-recovery body diode in the STWA72N60DM2AG?
The fast-recovery body diode has very low recovery charge (Qrr) and time (trr).
- What is the thermal resistance junction-case (Rthj-case) of the STWA72N60DM2AG?
The thermal resistance junction-case (Rthj-case) is 0.28 °C/W.
- What are some typical applications of the STWA72N60DM2AG?
Typical applications include switching applications, high-efficiency converters, bridge topologies, and ZVS phase-shift converters.
- What is the maximum gate-source voltage (VGS) of the STWA72N60DM2AG?
The maximum gate-source voltage (VGS) is ±25 V.
- What is the operating junction temperature range (Tj) of the STWA72N60DM2AG?
The operating junction temperature range (Tj) is -55 to 150 °C.
