Overview
The STW63N65DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed for high-efficiency converters and is particularly suited for bridge topologies and ZVS phase-shift converters. It features very low recovery charge (Qrr) and time (trr), combined with low RDS(on), making it ideal for demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 650 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 0.042 (typ.), 0.05 (max.) | Ω |
| ID (Drain Current, continuous at Tcase = 25 °C) | 60 | A |
| ID (Drain Current, continuous at Tcase = 100 °C) | 38 | A |
| IDM (Drain Current, pulsed) | 240 | A |
| PTOT (Total Dissipation at Tcase = 25 °C) | 446 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| Tj (Operating Junction Temperature Range) | -55 to 150 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 0.28 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 50 | °C/W |
Key Features
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance (RDS(on))
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
The STW63N65DM2 is suitable for a variety of high-efficiency switching applications, including:
- Bridge topologies
- ZVS phase-shift converters
- Other high-efficiency converters
Q & A
- What is the maximum drain-source voltage (VDS) of the STW63N65DM2?
The maximum drain-source voltage (VDS) is 650 V. - What is the typical static drain-source on-resistance (RDS(on)) of the STW63N65DM2?
The typical static drain-source on-resistance (RDS(on)) is 0.042 Ω. - What is the maximum continuous drain current (ID) at Tcase = 25 °C?
The maximum continuous drain current (ID) at Tcase = 25 °C is 60 A. - What is the maximum pulsed drain current (IDM) of the STW63N65DM2?
The maximum pulsed drain current (IDM) is 240 A. - What is the total dissipation (PTOT) at Tcase = 25 °C?
The total dissipation (PTOT) at Tcase = 25 °C is 446 W. - What is the storage temperature range (Tstg) for the STW63N65DM2?
The storage temperature range (Tstg) is -55 to 150 °C. - What is the thermal resistance junction-case (Rthj-case) of the STW63N65DM2?
The thermal resistance junction-case (Rthj-case) is 0.28 °C/W. - What are some key features of the STW63N65DM2?
Key features include a fast-recovery body diode, extremely low gate charge and input capacitance, low on-resistance, 100% avalanche tested, extremely high dv/dt ruggedness, and Zener protection. - What are typical applications for the STW63N65DM2?
Typical applications include bridge topologies, ZVS phase-shift converters, and other high-efficiency converters. - What package type is the STW63N65DM2 available in?
The STW63N65DM2 is available in a TO-247 package.
