STW45NM50FD
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STMicroelectronics STW45NM50FD

Manufacturer No:
STW45NM50FD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 45A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW45NM50FD is a high-performance N-channel power MOSFET produced by STMicroelectronics. It belongs to the FDmesh™ family, which combines the advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. This MOSFET is designed to enhance power density in high-voltage converters, making it suitable for various high-power applications.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)500 V
Maximum Gate-Source Voltage (Vgs)30 V
Maximum Gate-Threshold Voltage (Vgs(th))5 V
Maximum Drain Current (Id)45 A
Maximum Junction Temperature (Tj)150 °C
Maximum Power Dissipation (Pd)417 W
Maximum Drain-Source On-State Resistance (Rds(on))0.1 Ω
Total Gate Charge (Qg)92 nC
Rise Time (tr)107.5 nS
Output Capacitance (Coss)1260 pF
PackageTO247

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • Tight process control and high manufacturing yields for robust device performance and reliable operation
  • Intrinsic fast-recovery body diode
  • High dv/dt and avalanche capabilities
  • Zener-protected

Applications

The STW45NM50FD MOSFET is ideal for various high-power applications, including:

  • Flyback converters
  • LED lighting systems
  • High-voltage DC-DC converters
  • Power supplies requiring high efficiency and reliability

Q & A

  1. What is the maximum drain-source voltage of the STW45NM50FD MOSFET?
    The maximum drain-source voltage is 500 V.
  2. What is the maximum gate-source voltage for this MOSFET?
    The maximum gate-source voltage is 30 V.
  3. What is the maximum drain current of the STW45NM50FD?
    The maximum drain current is 45 A.
  4. What is the maximum junction temperature for this device?
    The maximum junction temperature is 150 °C.
  5. What package type is used for the STW45NM50FD?
    The package type is TO247.
  6. What are some key features of the STW45NM50FD?
    Key features include low input capacitance and gate charge, low gate input resistance, and 100% avalanche testing.
  7. What applications is the STW45NM50FD suitable for?
    It is suitable for flyback converters, LED lighting systems, and high-voltage DC-DC converters.
  8. What is the maximum power dissipation of the STW45NM50FD?
    The maximum power dissipation is 417 W.
  9. What is the total gate charge of the STW45NM50FD?
    The total gate charge is 92 nC.
  10. Does the STW45NM50FD have any special protection features?
    Yes, it is Zener-protected.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):417W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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