Overview
The STW20NK50Z is an N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is part of ST's high-voltage MOSFET family, which includes the revolutionary MDmesh™ products. The SuperMESH™ technology optimizes the strip-based PowerMESH™ layout, significantly reducing on-resistance and enhancing dv/dt capability, making it suitable for the most demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Fet Type | N-Ch | |
| No of Channels | 1 | |
| Drain-to-Source Voltage [Vdss] | 500 | V |
| Drain-Source On Resistance-Max | 0.27 | Ω |
| Rated Power Dissipation | 190 | W |
| Qg Gate Charge | 85 | nC |
| Gate-Source Voltage-Max [Vgss] | 30 | V |
| Drain Current | 20 | A |
| Turn-on Delay Time | 28 | ns |
| Turn-off Delay Time | 70 | ns |
| Rise Time | 20 | ns |
| Fall Time | 15 | ns |
| Gate Source Threshold | 3.75 | V |
| Input Capacitance | 2600 | pF |
| Package Style | TO-247-3 | |
| Mounting Method | Through Hole |
Key Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
- Zener-protected to enhance ESD capability and absorb voltage transients
Applications
The STW20NK50Z is primarily used in switching applications due to its high dv/dt capability, low on-resistance, and robust avalanche characteristics. These features make it suitable for a wide range of high-power switching circuits.
Q & A
- What is the maximum drain-to-source voltage of the STW20NK50Z?
The maximum drain-to-source voltage (Vdss) is 500 V.
- What is the maximum drain current of the STW20NK50Z?
The maximum continuous drain current is 20 A at TC = 25 °C and 12.6 A at TC = 100 °C.
- What is the on-resistance of the STW20NK50Z?
The maximum static drain-source on-resistance (Rds(on)) is 0.27 Ω.
- What is the package style of the STW20NK50Z?
The package style is TO-247-3.
- What are the key features of the STW20NK50Z?
Key features include extremely high dv/dt capability, 100% avalanche tested, gate charge minimized, very low intrinsic capacitances, and very good manufacturing repeatability.
- What is the maximum gate-source voltage of the STW20NK50Z?
The maximum gate-source voltage (Vgss) is ±30 V.
- What is the maximum junction temperature of the STW20NK50Z?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the total gate charge of the STW20NK50Z?
The total gate charge (Qg) is 85 nC.
- What are the typical applications of the STW20NK50Z?
The STW20NK50Z is typically used in switching applications.
- Does the STW20NK50Z have built-in protection features?
Yes, it includes built-in Zener diodes to enhance ESD capability and absorb voltage transients.
