STW15NK90Z
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STMicroelectronics STW15NK90Z

Manufacturer No:
STW15NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 15A TO247-3
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Payment:
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Product Introduction

Overview

The STW15NK90Z is a high-performance N-channel Zener Protected SuperMESH™ PowerMOSFET produced by STMicroelectronics. This device is part of the SuperMESH™ series, which is optimized from ST’s well-established strip-based PowerMESH™ layout. The STW15NK90Z is designed to offer extremely low on-resistance and high dv/dt capability, making it suitable for the most demanding applications. It complements ST’s full range of high voltage MOSFETs, including the revolutionary MDmesh™ products.

Key Specifications

Fet Type N-Ch
Drain-to-Source Voltage (Vdss) 900 V
Drain-Source On Resistance-Max (RDS(on)) 0.4 Ω (typ), 0.55 Ω (max)
Rated Power Dissipation (PTOT) 350 W
Gate Charge (Qg) 256 nC
Package Style TO-247-3
Drain Current (ID) 15 A (continuous at TC = 25°C), 9.5 A (continuous at TC = 100°C)
Pulse Drain Current (IDM) 60 A
Gate-Source Voltage (VGS) ± 30 V
Thermal Resistance Junction-Case (Rthj-case) 0.36 °C/W
Thermal Resistance Junction-Ambient (Rthj-a) 50 °C/W
Operating Junction Temperature (TJ) -55 to 150 °C

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Built-in back-to-back Zener diodes for enhanced ESD capability and protection against voltage transients

Applications

The STW15NK90Z is suitable for various high-power switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Aerospace and industrial control systems

Q & A

  1. What is the drain-to-source voltage rating of the STW15NK90Z?

    The drain-to-source voltage (Vdss) rating is 900 V.

  2. What is the maximum drain-source on resistance of the STW15NK90Z?

    The maximum drain-source on resistance (RDS(on)) is 0.55 Ω.

  3. What is the rated power dissipation of the STW15NK90Z?

    The rated power dissipation (PTOT) is 350 W.

  4. What is the gate charge of the STW15NK90Z?

    The total gate charge (Qg) is 256 nC.

  5. What package style is the STW15NK90Z available in?

    The STW15NK90Z is available in the TO-247-3 package style.

  6. What are the continuous drain current ratings for the STW15NK90Z at different temperatures?

    The continuous drain current (ID) is 15 A at TC = 25°C and 9.5 A at TC = 100°C.

  7. What is the pulse drain current rating for the STW15NK90Z?

    The pulse drain current (IDM) is 60 A.

  8. What is the gate-source voltage rating for the STW15NK90Z?

    The gate-source voltage (VGS) rating is ± 30 V.

  9. What are the thermal resistance values for the STW15NK90Z?

    The thermal resistance junction-case (Rthj-case) is 0.36 °C/W, and the thermal resistance junction-ambient (Rthj-a) is 50 °C/W.

  10. What is the operating junction temperature range for the STW15NK90Z?

    The operating junction temperature (TJ) range is -55 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:256 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW15NK90Z STW11NK90Z STW12NK90Z STW15NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 500 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 9.2A (Tc) 11A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 7.5A, 10V 980mOhm @ 4.6A, 10V 880mOhm @ 5.5A, 10V 340mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 150µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 256 nC @ 10 V 115 nC @ 10 V 152 nC @ 10 V 106 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V 3000 pF @ 25 V 3500 pF @ 25 V 2260 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 350W (Tc) 200W (Tc) 230W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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