STW12NK90Z
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STMicroelectronics STW12NK90Z

Manufacturer No:
STW12NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 11A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW12NK90Z is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH™ series, which is optimized using ST's well-established strip-based PowerMESH™ layout. The STW12NK90Z is designed to offer extremely low on-resistance, high dv/dt capability, and excellent manufacturing repeatability, making it suitable for the most demanding applications. It features integrated Zener diodes to enhance ESD protection and absorb voltage transients, eliminating the need for external components.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 900 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 11 A
Continuous Drain Current (ID) at TC = 100°C 7 A
Pulsed Drain Current (IDM) 44 A
Total Dissipation at TC = 25°C (Ptot) 230 W
Derating Factor 1.85 W/°C
Gate-Source ESD (VESD) 6000 V
Static Drain-Source On-Resistance (RDS(on)) 0.72 - 0.88 Ω
Thermal Resistance Junction-Case (Rthj-case) 0.54 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 50 °C/W
Maximum Junction Temperature (Tj) 150 °C
Maximum Lead Temperature for Soldering 300 °C
Total Gate Charge (Qg) 113 nC
Package TO-247

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitance.
  • Very good manufacturing repeatability.
  • Integrated Zener diodes for enhanced ESD protection and to absorb voltage transients.

Applications

The STW12NK90Z is primarily used in switching applications, including but not limited to:

  • Flyback converters.
  • LED lighting systems.
  • Other high-voltage switching circuits where high reliability and low on-resistance are critical.

Q & A

  1. What is the maximum drain-source voltage of the STW12NK90Z?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the continuous drain current at 25°C and 100°C?

    The continuous drain current is 11 A at 25°C and 7 A at 100°C.

  3. What is the total dissipation at 25°C?

    The total dissipation (Ptot) at 25°C is 230 W.

  4. What is the derating factor for temperature?

    The derating factor is 1.85 W/°C.

  5. What is the maximum gate-source voltage?

    The maximum gate-source voltage (VGS) is ±30 V.

  6. What is the static drain-source on-resistance?

    The static drain-source on-resistance (RDS(on)) is between 0.72 Ω and 0.88 Ω.

  7. What is the thermal resistance junction-case?

    The thermal resistance junction-case (Rthj-case) is 0.54 °C/W.

  8. What is the maximum junction temperature?

    The maximum junction temperature (Tj) is 150 °C.

  9. What is the package type of the STW12NK90Z?

    The package type is TO-247.

  10. What are the key features of the STW12NK90Z?

    The key features include high dv/dt capability, 100% avalanche testing, minimized gate charge, low intrinsic capacitance, good manufacturing repeatability, and integrated Zener diodes for ESD protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:880mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW12NK90Z STW15NK90Z STW12NK95Z STW11NK90Z STW12NK60Z STW12NK80Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 950 V 900 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 15A (Tc) 10A (Tc) 9.2A (Tc) 10A (Tc) 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 880mOhm @ 5.5A, 10V 550mOhm @ 7.5A, 10V 900mOhm @ 5A, 10V 980mOhm @ 4.6A, 10V 640mOhm @ 5A, 10V 750mOhm @ 5.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 150µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 256 nC @ 10 V 113 nC @ 10 V 115 nC @ 10 V 59 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 6100 pF @ 25 V 3500 pF @ 25 V 3000 pF @ 25 V 1740 pF @ 25 V 2620 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 230W (Tc) 350W (Tc) 230W (Tc) 200W (Tc) 150W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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