STW12NK95Z
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STMicroelectronics STW12NK95Z

Manufacturer No:
STW12NK95Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 10A TO247-3
Delivery:
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Product Introduction

Overview

The STW12NK95Z is a high-voltage N-channel power MOSFET produced by STMicroelectronics. This device is part of ST's SuperMESH™ Power MOSFET family, known for its high performance and reliability in demanding applications. The STW12NK95Z is designed to offer extremely low on-resistance, high dv/dt capability, and robust avalanche characteristics, making it ideal for various power conversion and switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 900 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 11 A
Continuous Drain Current (ID) at TC = 100°C 7 A
Pulsed Drain Current (IDM) 44 A
Total Dissipation at TC = 25°C 230 W
Static Drain-Source On Resistance (RDS(on)) 0.72 - 0.88 Ω
Gate Threshold Voltage (VGS(th)) 3 - 4.5 V
Thermal Resistance Junction-Case (Rthj-case) 0.54 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 50 °C/W
Maximum Operating Junction Temperature (Tj) 150 °C

Key Features

  • High voltage rating of 900 V, making it suitable for high-voltage applications.
  • Extremely low on-resistance (RDS(on)) of 0.72 - 0.88 Ω, minimizing power losses.
  • 100% avalanche tested, ensuring robustness against high-energy pulses.
  • High dv/dt capability, suitable for demanding switching applications.
  • Integrated Zener diodes for enhanced ESD protection and transient voltage absorption.
  • Very low intrinsic capacitance and minimized gate charge.
  • Good manufacturing repeatability and reliability.

Applications

  • Flyback converters and other switching power supplies.
  • LED lighting systems requiring high voltage and efficiency.
  • Industrial power conversion and motor control systems.
  • High-voltage DC-DC converters and inverters.

Q & A

  1. What is the maximum drain-source voltage of the STW12NK95Z?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is 11 A.

  3. What is the typical on-resistance of the STW12NK95Z?

    The typical static drain-source on resistance (RDS(on)) is between 0.72 and 0.88 Ω.

  4. Does the STW12NK95Z have built-in ESD protection?
  5. What are the typical applications of the STW12NK95Z?

    Typical applications include flyback converters, LED lighting systems, industrial power conversion, and high-voltage DC-DC converters.

  6. What is the maximum operating junction temperature of the STW12NK95Z?

    The maximum operating junction temperature (Tj) is 150°C.

  7. Is the STW12NK95Z 100% avalanche tested?
  8. What is the thermal resistance junction-case of the STW12NK95Z?

    The thermal resistance junction-case (Rthj-case) is 0.54 °C/W.

  9. What package type is the STW12NK95Z available in?

    The STW12NK95Z is available in the TO-247 package.

  10. Is the STW12NK95Z still in production?

    No, the STW12NK95Z is obsolete and no longer manufactured.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:113 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW12NK95Z STW12NK90Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 5A, 10V 880mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V 152 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 3500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 230W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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