STW11NK90Z
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STMicroelectronics STW11NK90Z

Manufacturer No:
STW11NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 9.2A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW11NK90Z is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of the SuperMESH™ family, known for its advanced technology that enhances switching performance and reduces losses. The STW11NK90Z is packaged in a TO-247 package, making it suitable for a variety of high-power applications. With its robust design and advanced features, this MOSFET is ideal for use in power conversion systems, motor control, and other high-current applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 900 V
Drain Current (Id) 9.2 (typ), 5.8 (max) A
On-Resistance (Rds(on)) 0.82 (typ) Ω
Package Type TO-247
Polarization N-Channel
Technology SuperMESH™

Key Features

  • High Drain-Source Voltage: The STW11NK90Z can handle up to 900V, making it suitable for high-voltage applications.
  • Low On-Resistance: With a typical on-resistance of 0.82Ω, this MOSFET minimizes power losses during operation.
  • High Current Capability: The device can handle a maximum drain current of 9.2A, ensuring reliable performance in high-current applications.
  • SuperMESH™ Technology: This advanced technology enhances switching performance and reduces electromagnetic interference (EMI).
  • Zener Protection: The MOSFET includes Zener protection to enhance reliability and protect against voltage spikes.

Applications

  • Power Conversion Systems: Suitable for use in DC-DC converters, power supplies, and other power conversion applications.
  • Motor Control: Ideal for motor drive systems due to its high current and voltage handling capabilities.
  • Industrial Automation: Used in various industrial automation applications requiring high reliability and performance.
  • Renewable Energy Systems: Can be used in solar and wind power systems to manage high-voltage and high-current requirements.

Q & A

  1. What is the maximum drain-source voltage of the STW11NK90Z?

    The maximum drain-source voltage of the STW11NK90Z is 900V.

  2. What is the typical on-resistance of the STW11NK90Z?

    The typical on-resistance of the STW11NK90Z is 0.82Ω.

  3. What is the maximum drain current of the STW11NK90Z?

    The maximum drain current of the STW11NK90Z is 9.2A.

  4. What package type is the STW11NK90Z available in?

    The STW11NK90Z is available in a TO-247 package.

  5. What technology is used in the STW11NK90Z?

    The STW11NK90Z uses SuperMESH™ technology.

  6. Does the STW11NK90Z have Zener protection?

    Yes, the STW11NK90Z includes Zener protection.

  7. What are some common applications of the STW11NK90Z?

    The STW11NK90Z is commonly used in power conversion systems, motor control, industrial automation, and renewable energy systems.

  8. Why is the SuperMESH™ technology important in the STW11NK90Z?

    The SuperMESH™ technology enhances switching performance and reduces electromagnetic interference (EMI), making the device more efficient and reliable.

  9. How does the STW11NK90Z handle high-voltage spikes?

    The STW11NK90Z includes Zener protection to handle high-voltage spikes and ensure device reliability.

  10. What is the polarization type of the STW11NK90Z?

    The STW11NK90Z is an N-channel MOSFET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:980mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW11NK90Z STW12NK90Z STW15NK90Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Tc) 11A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 980mOhm @ 4.6A, 10V 880mOhm @ 5.5A, 10V 550mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V 152 nC @ 10 V 256 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V 3500 pF @ 25 V 6100 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 230W (Tc) 350W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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