Overview
The STW15NK50Z is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized for extreme high-voltage and high-current applications, leveraging ST's advanced strip-based PowerMESH™ layout. The STW15NK50Z is designed to offer low on-resistance, high dv/dt capability, and excellent manufacturing repeatability, making it suitable for the most demanding switching applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 500 | V |
Drain-Source Breakdown Voltage (V(BR)DSS) | 500 | V |
Gate-Source Voltage (VGS) | ±30 | V |
Continuous Drain Current (ID) at TC = 25°C | 14 | A |
Pulsed Drain Current (IDM) | 56 | A |
Total Dissipation at TC = 25°C | 160 | W |
Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 7A | 0.30 - 0.34 | Ω |
Thermal Resistance Junction-Case (Rthj-case) | 0.78 | °C/W |
Operating Junction Temperature (TJ) | -50 to 150 | °C |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested for reliability.
- Minimized gate charge for efficient switching.
- Very low intrinsic capacitances.
- Very good manufacturing repeatability.
- Integrated gate-source Zener diodes for enhanced ESD protection and transient absorption.
- Available in various packages including TO-220, TO-220FP, D2PAK, I2PAK, and TO-247.
Applications
The STW15NK50Z is designed for high-voltage switching applications, including but not limited to:
- Power supplies and converters.
- Motor control and drives.
- Industrial and automotive systems requiring high reliability and performance.
- Uninterruptible Power Supplies (UPS) and other high-power electronic devices.
Q & A
- What is the maximum drain-source voltage (VDS) of the STW15NK50Z?
The maximum drain-source voltage (VDS) is 500V.
- What is the continuous drain current (ID) at 25°C for the STW15NK50Z?
The continuous drain current (ID) at 25°C is 14A.
- What is the typical on-resistance (RDS(on)) of the STW15NK50Z?
The typical on-resistance (RDS(on)) is between 0.30Ω and 0.34Ω at VGS = 10V and ID = 7A.
- What are the thermal resistance values for the STW15NK50Z?
The thermal resistance junction-case (Rthj-case) is 0.78°C/W, and the thermal resistance junction-ambient (Rthj-a) is 62.5°C/W.
- Does the STW15NK50Z have built-in ESD protection?
Yes, it has integrated gate-source Zener diodes for enhanced ESD protection and transient absorption.
- In what packages is the STW15NK50Z available?
The STW15NK50Z is available in TO-220, TO-220FP, D2PAK, I2PAK, and TO-247 packages.
- What is the maximum operating junction temperature for the STW15NK50Z?
The maximum operating junction temperature is 150°C.
- What is the maximum pulse current (IDM) for the STW15NK50Z?
The maximum pulse current (IDM) is 56A.
- Is the STW15NK50Z suitable for high dv/dt applications?
Yes, it has an extremely high dv/dt capability, making it suitable for demanding applications.
- What is the gate-source breakdown voltage (BVGSO) for the STW15NK50Z?
The gate-source breakdown voltage (BVGSO) is 30V.