STW15NK50Z
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STMicroelectronics STW15NK50Z

Manufacturer No:
STW15NK50Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 14A TO247-3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STW15NK50Z is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized for extreme high-voltage and high-current applications, leveraging ST's advanced strip-based PowerMESH™ layout. The STW15NK50Z is designed to offer low on-resistance, high dv/dt capability, and excellent manufacturing repeatability, making it suitable for the most demanding switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 500 V
Drain-Source Breakdown Voltage (V(BR)DSS) 500 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 14 A
Pulsed Drain Current (IDM) 56 A
Total Dissipation at TC = 25°C 160 W
Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 7A 0.30 - 0.34 Ω
Thermal Resistance Junction-Case (Rthj-case) 0.78 °C/W
Operating Junction Temperature (TJ) -50 to 150 °C

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.
  • Integrated gate-source Zener diodes for enhanced ESD protection and transient absorption.
  • Available in various packages including TO-220, TO-220FP, D2PAK, I2PAK, and TO-247.

Applications

The STW15NK50Z is designed for high-voltage switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial and automotive systems requiring high reliability and performance.
  • Uninterruptible Power Supplies (UPS) and other high-power electronic devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW15NK50Z?

    The maximum drain-source voltage (VDS) is 500V.

  2. What is the continuous drain current (ID) at 25°C for the STW15NK50Z?

    The continuous drain current (ID) at 25°C is 14A.

  3. What is the typical on-resistance (RDS(on)) of the STW15NK50Z?

    The typical on-resistance (RDS(on)) is between 0.30Ω and 0.34Ω at VGS = 10V and ID = 7A.

  4. What are the thermal resistance values for the STW15NK50Z?

    The thermal resistance junction-case (Rthj-case) is 0.78°C/W, and the thermal resistance junction-ambient (Rthj-a) is 62.5°C/W.

  5. Does the STW15NK50Z have built-in ESD protection?

    Yes, it has integrated gate-source Zener diodes for enhanced ESD protection and transient absorption.

  6. In what packages is the STW15NK50Z available?

    The STW15NK50Z is available in TO-220, TO-220FP, D2PAK, I2PAK, and TO-247 packages.

  7. What is the maximum operating junction temperature for the STW15NK50Z?

    The maximum operating junction temperature is 150°C.

  8. What is the maximum pulse current (IDM) for the STW15NK50Z?

    The maximum pulse current (IDM) is 56A.

  9. Is the STW15NK50Z suitable for high dv/dt applications?

    Yes, it has an extremely high dv/dt capability, making it suitable for demanding applications.

  10. What is the gate-source breakdown voltage (BVGSO) for the STW15NK50Z?

    The gate-source breakdown voltage (BVGSO) is 30V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:340mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW15NK50Z STW15NK90Z STW13NK50Z STW14NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 900 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 15A (Tc) 11A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 340mOhm @ 7A, 10V 550mOhm @ 7.5A, 10V 480mOhm @ 6.5A, 10V 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 150µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V 256 nC @ 10 V 47 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2260 pF @ 25 V 6100 pF @ 25 V 1600 pF @ 25 V 2000 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 160W (Tc) 350W (Tc) 140W (Tc) 150W (Tc)
Operating Temperature -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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