Overview
The STW14NK50Z is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The SuperMESH™ series complements ST's full range of high-voltage MOSFETs, including the revolutionary MDmesh™ products. The STW14NK50Z is designed for demanding applications, particularly in switching roles, and features built-in gate-to-source Zener diodes for enhanced ESD protection and transient voltage absorption.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 500 | V |
| VGS (Gate-source voltage) | ±30 | V |
| ID (Continuous drain current at TC = 25°C) | 14 | A |
| ID (Continuous drain current at TC = 100°C) | 7.6 | A |
| IDM (Pulsed drain current) | 48 | A |
| PTOT (Total dissipation at TC = 25°C) | 150 | W |
| RDS(on) (Static drain-source on resistance) | <0.38 | Ω |
| VGS(th) (Gate threshold voltage) | 3 - 4.5 | V |
| IAR (Avalanche current) | 12 | A |
| EAS (Single pulse avalanche energy) | 400 | mJ |
| BVGSO (Gate-source breakdown voltage) | 30 | V |
| Package | TO-247 |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested to ensure robustness against transient voltages.
- Minimized gate charge for efficient switching performance.
- Very low intrinsic capacitances, reducing switching losses.
- Very good manufacturing repeatability, ensuring consistent performance across devices.
- Built-in back-to-back Zener diodes for enhanced ESD protection and transient voltage absorption.
Applications
The STW14NK50Z is primarily used in switching applications due to its high voltage and current handling capabilities. It is suitable for various high-power electronic systems, including:
- Power supplies and converters.
- Motor control and drive systems.
- High-voltage DC-DC converters.
- Industrial automation and control systems.
Q & A
- What is the maximum drain-source voltage of the STW14NK50Z?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current rating at 25°C for the STW14NK50Z?
The continuous drain current (ID) at 25°C is 14 A.
- What is the typical on-resistance (RDS(on)) of the STW14NK50Z?
The typical static drain-source on resistance (RDS(on)) is less than 0.38 Ω.
- What is the gate threshold voltage range for the STW14NK50Z?
The gate threshold voltage (VGS(th)) range is from 3 V to 4.5 V.
- Does the STW14NK50Z have built-in protection features?
- What is the maximum avalanche current for the STW14NK50Z?
The maximum avalanche current (IAR) is 12 A.
- What is the single pulse avalanche energy for the STW14NK50Z?
The single pulse avalanche energy (EAS) is 400 mJ.
- What package types are available for the STW14NK50Z?
The STW14NK50Z is available in the TO-247 package.
- What are the typical applications for the STW14NK50Z?
The STW14NK50Z is typically used in switching applications, including power supplies, motor control systems, and high-voltage DC-DC converters.
- What is the thermal resistance junction-ambient for the STW14NK50Z in the TO-247 package?
The thermal resistance junction-ambient (Rthj-a) for the TO-247 package is 62.5 °C/W.
