STP90NF03L
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STMicroelectronics STP90NF03L

Manufacturer No:
STP90NF03L
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 30V 90A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP90NF03L is a high-performance N-Channel Power MOSFET produced by STMicroelectronics. It is part of the third generation of STMicroelectronics' unique 'Single Feature Size™' strip-based process, designed to optimize performance and efficiency. This MOSFET is particularly suited for applications requiring high current handling and low on-resistance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
RDS(on) (On-Resistance)0.0056 Ω
ID (Continuous Drain Current)90 A
PD (Power Dissipation)200 W
VGS(th) (Threshold Voltage)2-4 V
PackageTO-220, I2PAK

Key Features

  • Low on-resistance (RDS(on)) of 0.0056 Ω, minimizing energy losses.
  • High continuous drain current (ID) of 90 A, suitable for high-power applications.
  • Low gate charge, enhancing switching performance.
  • High power dissipation capability of up to 200 W.
  • Third-generation 'Single Feature Size™' strip-based process for improved efficiency.

Applications

The STP90NF03L is ideal for various high-power applications, including:

  • Switch-mode power supplies.
  • Motor control and drive systems.
  • Power management in automotive and industrial systems.
  • High-frequency switching circuits.
  • DC-DC converters and inverters.

Q & A

  1. What is the maximum drain-source voltage of the STP90NF03L?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the on-resistance of the STP90NF03L?
    The on-resistance (RDS(on)) is 0.0056 Ω.
  3. What is the continuous drain current of the STP90NF03L?
    The continuous drain current (ID) is 90 A.
  4. What package types are available for the STP90NF03L?
    The STP90NF03L is available in TO-220 and I2PAK packages.
  5. What is the threshold voltage range of the STP90NF03L?
    The threshold voltage (VGS(th)) range is 2-4 V.
  6. What is the power dissipation capability of the STP90NF03L?
    The power dissipation capability is up to 200 W.
  7. What process technology is used in the STP90NF03L?
    The STP90NF03L uses the third-generation 'Single Feature Size™' strip-based process.
  8. What are some typical applications of the STP90NF03L?
    Typical applications include switch-mode power supplies, motor control, power management in automotive and industrial systems, and high-frequency switching circuits.
  9. Is the STP90NF03L suitable for high-frequency switching?
    Yes, it is suitable for high-frequency switching due to its low gate charge and low on-resistance.
  10. Where can I find detailed specifications for the STP90NF03L?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component databases.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP90NF03L STP70NF03L STP80NF03L
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 70A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 45A, 10V 9.5mOhm @ 35A, 10V 4.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 5 V 30 nC @ 5 V 110 nC @ 4.5 V
Vgs (Max) ±20V ±18V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 1440 pF @ 25 V 5500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 100W (Tc) 300W (Tc)
Operating Temperature -65°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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