STP75NF20
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STMicroelectronics STP75NF20

Manufacturer No:
STP75NF20
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 200V 75A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP75NF20 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET™ process. This device is optimized for minimal input capacitance and gate charge, making it highly suitable for primary switching applications in advanced high-efficiency isolated DC-DC converters. Available in TO-220 packaging, the STP75NF20 offers exceptional dv/dt capability and low gate charge, enhancing its performance in high-frequency switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)200V
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C75A
Continuous Drain Current (ID) at TC = 100°C47A
Pulsed Drain Current (IDM)300A
Static Drain-Source On Resistance (RDS(on))<0.034Ω
Thermal Resistance Junction-Case (RthJC)0.66°C/W
Thermal Resistance Junction-Ambient (RthJA)62.5°C/W
Gate Threshold Voltage (VGS(th))2-4V
Total Gate Charge (Qg)84nC

Key Features

  • Exceptional dv/dt capability
  • Low gate charge
  • 100% Avalanche tested
  • High efficiency in isolated DC-DC converters
  • Available in TO-220 packaging
  • Low input capacitance and gate charge
  • High current handling capability (up to 75A continuous, 300A pulsed)

Applications

The STP75NF20 is primarily used in switching applications, particularly in advanced high-efficiency isolated DC-DC converters. Its high current handling and low gate charge make it suitable for high-frequency switching environments. Other potential applications include power supplies, motor control systems, and high-power electronic devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP75NF20?
    The maximum drain-source voltage (VDS) is 200V.
  2. What is the continuous drain current (ID) at 25°C?
    The continuous drain current (ID) at 25°C is 75A.
  3. What is the typical static drain-source on resistance (RDS(on))?
    The typical static drain-source on resistance (RDS(on)) is less than 0.034Ω.
  4. What is the thermal resistance junction-case (RthJC) for the TO-220 package?
    The thermal resistance junction-case (RthJC) is 0.66°C/W.
  5. What is the gate threshold voltage (VGS(th)) range?
    The gate threshold voltage (VGS(th)) range is 2-4V.
  6. What is the total gate charge (Qg) for the STP75NF20?
    The total gate charge (Qg) is 84nC.
  7. In what package is the STP75NF20 available?
    The STP75NF20 is available in the TO-220 package.
  8. What are the typical applications of the STP75NF20?
    The STP75NF20 is typically used in switching applications, especially in high-efficiency isolated DC-DC converters.
  9. What is the maximum operating junction temperature for the STP75NF20?
    The maximum operating junction temperature is 150°C.
  10. Is the STP75NF20 100% Avalanche tested?
    Yes, the STP75NF20 is 100% Avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:34mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP75NF20
STP75NF20
MOSFET N-CH 200V 75A TO220AB
STW75NF20
STW75NF20
MOSFET N-CH 200V 75A TO247-3

Similar Products

Part Number STP75NF20 STP75N20
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 34mOhm @ 37A, 10V 34mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3260 pF @ 25 V 3260 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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