STW75NF20
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STMicroelectronics STW75NF20

Manufacturer No:
STW75NF20
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 200V 75A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW75NF20 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET™ process. This device is optimized for advanced high-efficiency isolated DC-DC converters and other switching applications. It features exceptional dv/dt capability, low gate charge, and high current handling, making it suitable for demanding power management scenarios.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 200 V
Gate-source voltage (VGS) ±20 V
Drain current (continuous) at TC = 25°C (ID) 75 A
Drain current (continuous) at TC = 100°C (ID) 47 A
Drain current (pulsed) (IDM) 300 A
Static drain-source on resistance (RDS(on)) <0.034 Ω
Gate threshold voltage (VGS(th)) 2-4 V
Thermal resistance junction-case (RthJC) 0.66 °C/W
Thermal resistance junction-ambient (RthJA) 40 °C/W
Maximum lead temperature for soldering (Tl) 300 °C

Key Features

  • Exceptional dv/dt capability: Ensures robust performance in high-frequency switching applications.
  • Low gate charge: Minimizes the energy required to switch the MOSFET on and off, enhancing efficiency.
  • High current handling: Supports up to 75A continuous drain current at 25°C and 47A at 100°C.
  • 100% Avalanche tested: Ensures reliability under extreme conditions.
  • ECOPACK® packages: Lead-free second level interconnect, compliant with JEDEC Standard JESD97.

Applications

  • Advanced high-efficiency isolated DC-DC converters: Ideal for primary switch applications in high-efficiency power conversion systems.
  • Switching applications: Suitable for various switching scenarios requiring high current and low on-resistance.
  • Power management systems: Used in systems that require efficient power handling and high reliability.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW75NF20?

    The maximum drain-source voltage (VDS) is 200V.

  2. What is the continuous drain current (ID) at 25°C and 100°C?

    The continuous drain current (ID) is 75A at 25°C and 47A at 100°C.

  3. What is the typical static drain-source on resistance (RDS(on))?

    The typical static drain-source on resistance (RDS(on)) is less than 0.034Ω.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is between 2V and 4V.

  5. What are the thermal resistance values for junction-case and junction-ambient?

    The thermal resistance junction-case (RthJC) is 0.66°C/W, and the thermal resistance junction-ambient (RthJA) is 40°C/W.

  6. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300°C.

  7. Is the STW75NF20 100% Avalanche tested?
  8. What type of packages are available for the STW75NF20?

    The STW75NF20 is available in TO-247 packages.

  9. Are the packages lead-free?
  10. What are some common applications for the STW75NF20?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:34mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STP75NF20
STP75NF20
MOSFET N-CH 200V 75A TO220AB
STW75NF20
STW75NF20
MOSFET N-CH 200V 75A TO247-3

Similar Products

Part Number STW75NF20 STW75NF30 STW75N20
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 300 V 200 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 60A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 34mOhm @ 37A, 10V 45mOhm @ 30A, 10V 34mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 164 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3260 pF @ 25 V 5930 pF @ 25 V 3260 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 190W (Tc) 320W (Tc) 190W (Tc)
Operating Temperature -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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