Overview
The STL8N80K5 is a high-performance N-channel Power MOSFET designed by STMicroelectronics. It utilizes ST's advanced MDmesh K5 technology, which ensures high voltage handling and robust avalanche ruggedness. This MOSFET is particularly suited for applications requiring high power density and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 800 V |
| ID (Drain Current) | 4.5 A |
| RDS(on) (On-State Resistance) | 0.8 Ω (typ.) |
| PD (Power Dissipation) | 42 W |
| Package | PowerFLAT 5x6 VHV |
| Technology | MDmesh K5 |
Key Features
- High voltage handling up to 800 V
- Low on-state resistance (RDS(on)) of 0.8 Ω (typ.)
- High drain current capability of 4.5 A
- Avalanche ruggedness and Zener protection
- Advanced MDmesh K5 technology for improved performance and reliability
- Surface mount package (PowerFLAT 5x6 VHV) for compact designs
Applications
- Power supplies and DC-DC converters
- Motor control and drives
- Industrial and consumer electronics
- Automotive systems (where applicable)
- High-power switching applications
Q & A
- What is the maximum drain-source voltage of the STL8N80K5?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-state resistance of the STL8N80K5?
The typical on-state resistance (RDS(on)) is 0.8 Ω.
- What is the maximum drain current of the STL8N80K5?
The maximum drain current (ID) is 4.5 A.
- What technology is used in the STL8N80K5?
The STL8N80K5 uses ST's MDmesh K5 technology.
- What is the package type of the STL8N80K5?
The package type is PowerFLAT 5x6 VHV.
- Is the STL8N80K5 Zener-protected?
- What are some common applications for the STL8N80K5?
- What is the maximum power dissipation of the STL8N80K5?
The maximum power dissipation (PD) is 42 W.
- Why is the MDmesh K5 technology important in this MOSFET?
The MDmesh K5 technology enhances the MOSFET's performance by providing high voltage handling, low on-state resistance, and improved reliability.
- Can the STL8N80K5 be used in automotive applications?
