STL4N80K5
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STMicroelectronics STL4N80K5

Manufacturer No:
STL4N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 2.5A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL4N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using their innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure, enhancing the device's performance and reliability. The MOSFET is packaged in a PowerFLAT 5x6 VHV package, which is optimized for high power density and thermal management.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
On-State Resistance (Rds(on))2.1 Ohm (typ.)
Drain Current (Id)2.5 A
Package TypePowerFLAT 5x6 VHV
Avalanche RuggednessZener-protected SuperMESH™ 5

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-state resistance (Rds(on)) of 2.1 Ohm (typ.), reducing power losses.
  • High drain current of 2.5 A, supporting a wide range of load conditions.
  • Zener-protected SuperMESH™ 5 technology for enhanced avalanche ruggedness and reliability.
  • PowerFLAT 5x6 VHV package for improved thermal management and high power density.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • High-voltage power management in various industrial and consumer electronics.

Q & A

  1. What is the voltage rating of the STL4N80K5 MOSFET?
    The voltage rating (Vds) of the STL4N80K5 is 800 V.
  2. What is the typical on-state resistance (Rds(on)) of the STL4N80K5?
    The typical on-state resistance (Rds(on)) is 2.1 Ohm.
  3. What is the maximum drain current (Id) of the STL4N80K5?
    The maximum drain current (Id) is 2.5 A.
  4. In what package is the STL4N80K5 available?
    The STL4N80K5 is available in a PowerFLAT 5x6 VHV package.
  5. What technology is used in the STL4N80K5?
    The STL4N80K5 uses STMicroelectronics' MDmesh™ K5 technology.
  6. Is the STL4N80K5 avalanche rugged?
    Yes, the STL4N80K5 is Zener-protected SuperMESH™ 5, making it avalanche rugged.
  7. What are some typical applications of the STL4N80K5?
    Typical applications include power supplies, motor control systems, industrial automation, and renewable energy systems.
  8. How does the PowerFLAT 5x6 VHV package benefit the STL4N80K5?
    The PowerFLAT 5x6 VHV package enhances thermal management and increases power density.
  9. What are the advantages of using MDmesh™ K5 technology?
    MDmesh™ K5 technology offers low on-state resistance, high voltage capability, and improved reliability.
  10. Is the STL4N80K5 suitable for high-power applications?
    Yes, the STL4N80K5 is designed for high-power applications due to its high voltage rating and low on-state resistance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL4N80K5 STL7N80K5 STL8N80K5 STL5N80K5 STL2N80K5 STL4LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3.6A (Tc) 4.5A (Tc) 3A (Tc) 2A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V 1.75Ohm @ 2A, 10V 4.9Ohm @ 1A, 10V 2.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 13.4 nC @ 10 V 16.5 nC @ 10 V 5 nC @ 10 V 3 nC @ 10 V 4 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V 360 pF @ 100 V 450 pF @ 100 V 177 pF @ 100 V 95 pF @ 100 V 110 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 38W (Tc) 42W (Tc) 42W (Tc) 38W (Tc) 33W (Tc) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) VHV PowerFlat™ (5x6) PowerFlat™ (5x6) VHV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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