STL7N80K5
  • Share:

STMicroelectronics STL7N80K5

Manufacturer No:
STL7N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 3.6A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL7N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure, which enhances the performance and efficiency of the device. The STL7N80K5 is characterized by its ultra-low gate charge, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-State Resistance) 0.95 Ohm (typ.)
ID (Drain Current) 3.6 A (Tc)
PD (Power Dissipation) 42 W (Tc)
Package Surface Mount PowerFlat™ (5x6)
Gate Charge Ultra low gate charge

Key Features

  • High voltage capability: 800 V drain-source voltage.
  • Low on-state resistance: 0.95 Ohm (typ.).
  • High current handling: 3.6 A (Tc).
  • Ultra-low gate charge for efficient switching.
  • MDmesh™ K5 technology for enhanced performance and reliability.
  • Surface Mount PowerFlat™ (5x6) package for compact design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power industrial and automotive applications.
  • Switch-mode power supplies.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum drain-source voltage of the STL7N80K5?

    The maximum drain-source voltage is 800 V.

  2. What is the typical on-state resistance of the STL7N80K5?

    The typical on-state resistance is 0.95 Ohm.

  3. What is the maximum drain current of the STL7N80K5?

    The maximum drain current is 3.6 A (Tc).

  4. What is the power dissipation capability of the STL7N80K5?

    The power dissipation capability is 42 W (Tc).

  5. What package type is the STL7N80K5 available in?

    The STL7N80K5 is available in a Surface Mount PowerFlat™ (5x6) package.

  6. What technology is used in the STL7N80K5?

    The STL7N80K5 uses MDmesh™ K5 technology.

  7. Why is the gate charge of the STL7N80K5 considered ultra-low?

    The gate charge is ultra-low, which enhances the switching efficiency of the device.

  8. In what types of applications is the STL7N80K5 commonly used?

    The STL7N80K5 is commonly used in power supplies, motor control systems, high-power industrial and automotive applications, and switch-mode power supplies.

  9. Where can I find detailed specifications for the STL7N80K5?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and TME.

  10. What are the benefits of using MDmesh™ K5 technology in the STL7N80K5?

    MDmesh™ K5 technology provides enhanced performance, reliability, and efficiency due to its innovative proprietary vertical structure.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$2.50
372

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL7N80K5 STL8N80K5 STL2N80K5 STL4N80K5 STL5N80K5 STL7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 4.5A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V 4.9Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 16.5 nC @ 10 V 3 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 450 pF @ 100 V 95 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 42W (Tc) 42W (Tc) 33W (Tc) 38W (Tc) 38W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) VHV PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN