STL7N80K5
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STMicroelectronics STL7N80K5

Manufacturer No:
STL7N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 3.6A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL7N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure, which enhances the performance and efficiency of the device. The STL7N80K5 is characterized by its ultra-low gate charge, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-State Resistance) 0.95 Ohm (typ.)
ID (Drain Current) 3.6 A (Tc)
PD (Power Dissipation) 42 W (Tc)
Package Surface Mount PowerFlat™ (5x6)
Gate Charge Ultra low gate charge

Key Features

  • High voltage capability: 800 V drain-source voltage.
  • Low on-state resistance: 0.95 Ohm (typ.).
  • High current handling: 3.6 A (Tc).
  • Ultra-low gate charge for efficient switching.
  • MDmesh™ K5 technology for enhanced performance and reliability.
  • Surface Mount PowerFlat™ (5x6) package for compact design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power industrial and automotive applications.
  • Switch-mode power supplies.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum drain-source voltage of the STL7N80K5?

    The maximum drain-source voltage is 800 V.

  2. What is the typical on-state resistance of the STL7N80K5?

    The typical on-state resistance is 0.95 Ohm.

  3. What is the maximum drain current of the STL7N80K5?

    The maximum drain current is 3.6 A (Tc).

  4. What is the power dissipation capability of the STL7N80K5?

    The power dissipation capability is 42 W (Tc).

  5. What package type is the STL7N80K5 available in?

    The STL7N80K5 is available in a Surface Mount PowerFlat™ (5x6) package.

  6. What technology is used in the STL7N80K5?

    The STL7N80K5 uses MDmesh™ K5 technology.

  7. Why is the gate charge of the STL7N80K5 considered ultra-low?

    The gate charge is ultra-low, which enhances the switching efficiency of the device.

  8. In what types of applications is the STL7N80K5 commonly used?

    The STL7N80K5 is commonly used in power supplies, motor control systems, high-power industrial and automotive applications, and switch-mode power supplies.

  9. Where can I find detailed specifications for the STL7N80K5?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and TME.

  10. What are the benefits of using MDmesh™ K5 technology in the STL7N80K5?

    MDmesh™ K5 technology provides enhanced performance, reliability, and efficiency due to its innovative proprietary vertical structure.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Part Number STL7N80K5 STL8N80K5 STL2N80K5 STL4N80K5 STL5N80K5 STL7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 4.5A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V 4.9Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 16.5 nC @ 10 V 3 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 100 V 450 pF @ 100 V 95 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 42W (Tc) 42W (Tc) 33W (Tc) 38W (Tc) 38W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) VHV PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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