STL2N80K5
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STMicroelectronics STL2N80K5

Manufacturer No:
STL2N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 2A POWERFLAT
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The STL2N80K5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is designed using the innovative MDmesh™ K5 technology, which features an advanced proprietary vertical structure. This technology results in a significant reduction in on-resistance and ultra-low gate charge, making it ideal for applications requiring superior power density and high efficiency. The STL2N80K5 is packaged in a PowerFLAT™ 5x6 VHV package, which is a surface-mount type, and is available in tape and reel packaging.

Key Specifications

ParameterValueUnit
Fet TypeN-Ch
No of Channels1
Drain-to-Source Voltage [Vdss]800V
Drain-Source On Resistance-Max [RDS(on)]4.5Ω
Rated Power Dissipation [PTOT]33W
Gate Charge [Qg]9.5nC
Gate-Source Voltage-Max [Vgss]±30V
Turn-on Delay Time [td(on)]8ns
Turn-off Delay Time [td(off)]19ns
Operating Temp Range [Tj]-55°C to +150°C
Height - Max1mm
Length5.2mm
Package StylePOWER FLAT
Mounting MethodSurface Mount

Key Features

  • Industry’s lowest RDS(on) and best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD capability
  • Integrated back-to-back Zener diodes to avoid the need for external components

Applications

The STL2N80K5 is designed for high-performance switching applications, particularly where superior power density and high efficiency are required. Its advanced MDmesh™ K5 technology makes it suitable for a variety of power management and control systems.

Q & A

  1. What is the maximum drain-to-source voltage of the STL2N80K5?
    The maximum drain-to-source voltage is 800 V.
  2. What is the typical on-resistance of the STL2N80K5?
    The typical on-resistance is 3.7 Ω, with a maximum of 4.5 Ω.
  3. What is the maximum gate-source voltage for the STL2N80K5?
    The maximum gate-source voltage is ±30 V.
  4. What is the operating temperature range of the STL2N80K5?
    The operating temperature range is -55°C to +150°C.
  5. What packaging options are available for the STL2N80K5?
    The STL2N80K5 is available in a PowerFLAT™ 5x6 VHV package, with tape and reel packaging.
  6. What are the key features of the MDmesh™ K5 technology used in the STL2N80K5?
    The MDmesh™ K5 technology features industry’s lowest RDS(on), best figure of merit (FoM), ultra-low gate charge, and 100% avalanche testing.
  7. What type of protection does the STL2N80K5 have against ESD?
    The STL2N80K5 has built-in back-to-back Zener diodes to enhance ESD capability.
  8. What are the typical switching times for the STL2N80K5?
    The turn-on delay time is 8 ns, the rise time is 12 ns, the turn-off delay time is 19 ns, and the fall time is 32 ns.
  9. What is the maximum continuous drain current for the STL2N80K5 at 25°C?
    The maximum continuous drain current at 25°C is 1.5 A.
  10. What is the maximum pulsed drain current for the STL2N80K5?
    The maximum pulsed drain current is 6 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:95 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL2N80K5 STL4N80K5 STL7N80K5 STL8N80K5 STL5N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2.5A (Tc) 3.6A (Tc) 4.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.9Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.2Ohm @ 3A, 10V 950mOhm @ 3A, 10V 1.75Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V 10.5 nC @ 10 V 13.4 nC @ 10 V 16.5 nC @ 10 V 5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 95 pF @ 100 V 175 pF @ 100 V 360 pF @ 100 V 450 pF @ 100 V 177 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 33W (Tc) 38W (Tc) 42W (Tc) 42W (Tc) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) VHV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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