STL8N6F7
  • Share:

STMicroelectronics STL8N6F7

Manufacturer No:
STL8N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 36A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL8N6F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device features an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge. These characteristics enable faster and more efficient switching, making it suitable for a variety of high-performance applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-State Resistance) 0.019 Ω
ID (Drain Current) 8 A
TJ (Junction Temperature) -55 to 175 °C
Pd (Power Dissipation) 166 W
Qg (Gate Charge) 79.5 nC
Package PowerFLAT 3.3x3.3

Key Features

  • Among the lowest RDS(on) on the market, ensuring minimal power loss.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness, providing robustness against transient events.

Applications

The STL8N6F7 is recommended for various industrial applications where high efficiency, low power loss, and robust performance are critical. These include but are not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching power stages in high-frequency applications.
  • General-purpose power switching where low on-state resistance is essential.

Q & A

  1. What is the typical on-state resistance of the STL8N6F7?

    The typical on-state resistance (RDS(on)) of the STL8N6F7 is 0.019 Ω.

  2. What is the maximum drain current for the STL8N6F7?

    The maximum drain current (ID) for the STL8N6F7 is 8 A.

  3. What is the operating temperature range for the STL8N6F7?

    The operating temperature range for the STL8N6F7 is from -55°C to 175°C.

  4. What package type is the STL8N6F7 available in?

    The STL8N6F7 is available in a PowerFLAT 3.3x3.3 package.

  5. What is the gate charge (Qg) of the STL8N6F7?

    The gate charge (Qg) of the STL8N6F7 is 79.5 nC.

  6. What are the key features of the STL8N6F7?

    The key features include low RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness.

  7. What are some typical applications for the STL8N6F7?

    Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching power stages.

  8. Is the STL8N6F7 RoHS compliant?
  9. What technology does the STL8N6F7 use?

    The STL8N6F7 uses STMicroelectronics' STripFET™ F7 technology.

  10. How does the STL8N6F7 enhance EMI immunity?

    The STL8N6F7 enhances EMI immunity through its low Crss/Ciss ratio.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$0.95
331

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL8N6F7 STL7N6F7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V 25mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 60W (Tc) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) PowerFlat™ (2x2)
Package / Case 8-PowerVDFN 6-PowerWDFN

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA