STL8N6F7
  • Share:

STMicroelectronics STL8N6F7

Manufacturer No:
STL8N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 36A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL8N6F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device features an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge. These characteristics enable faster and more efficient switching, making it suitable for a variety of high-performance applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-State Resistance) 0.019 Ω
ID (Drain Current) 8 A
TJ (Junction Temperature) -55 to 175 °C
Pd (Power Dissipation) 166 W
Qg (Gate Charge) 79.5 nC
Package PowerFLAT 3.3x3.3

Key Features

  • Among the lowest RDS(on) on the market, ensuring minimal power loss.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness, providing robustness against transient events.

Applications

The STL8N6F7 is recommended for various industrial applications where high efficiency, low power loss, and robust performance are critical. These include but are not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching power stages in high-frequency applications.
  • General-purpose power switching where low on-state resistance is essential.

Q & A

  1. What is the typical on-state resistance of the STL8N6F7?

    The typical on-state resistance (RDS(on)) of the STL8N6F7 is 0.019 Ω.

  2. What is the maximum drain current for the STL8N6F7?

    The maximum drain current (ID) for the STL8N6F7 is 8 A.

  3. What is the operating temperature range for the STL8N6F7?

    The operating temperature range for the STL8N6F7 is from -55°C to 175°C.

  4. What package type is the STL8N6F7 available in?

    The STL8N6F7 is available in a PowerFLAT 3.3x3.3 package.

  5. What is the gate charge (Qg) of the STL8N6F7?

    The gate charge (Qg) of the STL8N6F7 is 79.5 nC.

  6. What are the key features of the STL8N6F7?

    The key features include low RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness.

  7. What are some typical applications for the STL8N6F7?

    Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching power stages.

  8. Is the STL8N6F7 RoHS compliant?
  9. What technology does the STL8N6F7 use?

    The STL8N6F7 uses STMicroelectronics' STripFET™ F7 technology.

  10. How does the STL8N6F7 enhance EMI immunity?

    The STL8N6F7 enhances EMI immunity through its low Crss/Ciss ratio.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$0.95
331

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL8N6F7 STL7N6F7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V 25mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 60W (Tc) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) PowerFlat™ (2x2)
Package / Case 8-PowerVDFN 6-PowerWDFN

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
TDA7564B
TDA7564B
STMicroelectronics
IC AMP AB QUAD 75W 25FLEXIWATT
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO