STL8N6F7
  • Share:

STMicroelectronics STL8N6F7

Manufacturer No:
STL8N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 36A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL8N6F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device features an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge. These characteristics enable faster and more efficient switching, making it suitable for a variety of high-performance applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-State Resistance) 0.019 Ω
ID (Drain Current) 8 A
TJ (Junction Temperature) -55 to 175 °C
Pd (Power Dissipation) 166 W
Qg (Gate Charge) 79.5 nC
Package PowerFLAT 3.3x3.3

Key Features

  • Among the lowest RDS(on) on the market, ensuring minimal power loss.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness, providing robustness against transient events.

Applications

The STL8N6F7 is recommended for various industrial applications where high efficiency, low power loss, and robust performance are critical. These include but are not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching power stages in high-frequency applications.
  • General-purpose power switching where low on-state resistance is essential.

Q & A

  1. What is the typical on-state resistance of the STL8N6F7?

    The typical on-state resistance (RDS(on)) of the STL8N6F7 is 0.019 Ω.

  2. What is the maximum drain current for the STL8N6F7?

    The maximum drain current (ID) for the STL8N6F7 is 8 A.

  3. What is the operating temperature range for the STL8N6F7?

    The operating temperature range for the STL8N6F7 is from -55°C to 175°C.

  4. What package type is the STL8N6F7 available in?

    The STL8N6F7 is available in a PowerFLAT 3.3x3.3 package.

  5. What is the gate charge (Qg) of the STL8N6F7?

    The gate charge (Qg) of the STL8N6F7 is 79.5 nC.

  6. What are the key features of the STL8N6F7?

    The key features include low RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness.

  7. What are some typical applications for the STL8N6F7?

    Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching power stages.

  8. Is the STL8N6F7 RoHS compliant?
  9. What technology does the STL8N6F7 use?

    The STL8N6F7 uses STMicroelectronics' STripFET™ F7 technology.

  10. How does the STL8N6F7 enhance EMI immunity?

    The STL8N6F7 enhances EMI immunity through its low Crss/Ciss ratio.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$0.95
331

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL8N6F7 STL7N6F7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V 25mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 60W (Tc) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) PowerFlat™ (2x2)
Package / Case 8-PowerVDFN 6-PowerWDFN

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
BTA16-600SWRG
BTA16-600SWRG
STMicroelectronics
TRIAC SENS GATE 600V 16A TO220AB
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO