STL7N6F7
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STMicroelectronics STL7N6F7

Manufacturer No:
STL7N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 7A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL7N6F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is designed to offer very low on-state resistance and high current handling capabilities, making it suitable for a variety of power management applications. The MOSFET features an enhanced trench gate structure, which contributes to its excellent electrical characteristics and reliability.

Key Specifications

ParameterValue
Drain-Source Voltage (Vdss)60 V
On-State Resistance (Rds(on))21 mΩ (typ.)
Continuous Drain Current (Id)7 A
PackageDFN-8 (2x2)
TechnologySTripFET™ F7

Key Features

  • Low on-state resistance (Rds(on)) of 21 mΩ (typ.) for efficient power handling.
  • High continuous drain current (Id) of 7 A.
  • Enhanced trench gate structure for improved electrical performance.
  • Compact DFN-8 (2x2) package for space-saving designs.
  • High drain-source voltage (Vdss) of 60 V, suitable for various power applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including battery management and power distribution.
  • Industrial control and automation.
  • Consumer electronics requiring high power efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STL7N6F7?
    The maximum drain-source voltage (Vdss) is 60 V.
  2. What is the typical on-state resistance of the STL7N6F7?
    The typical on-state resistance (Rds(on)) is 21 mΩ.
  3. What is the continuous drain current rating of the STL7N6F7?
    The continuous drain current (Id) is 7 A.
  4. What package type is the STL7N6F7 available in?
    The STL7N6F7 is available in a DFN-8 (2x2) package.
  5. What technology does the STL7N6F7 use?
    The STL7N6F7 uses STripFET™ F7 technology.
  6. What are some common applications for the STL7N6F7?
    Common applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics requiring high power efficiency.
  7. Why is the STL7N6F7 considered high-performance?
    The STL7N6F7 is considered high-performance due to its low on-state resistance and high current handling capabilities.
  8. Is the STL7N6F7 suitable for automotive applications?
    Yes, the STL7N6F7 is suitable for automotive applications due to its robust electrical characteristics and reliability.
  9. What are the benefits of the enhanced trench gate structure in the STL7N6F7?
    The enhanced trench gate structure improves the electrical performance by reducing on-state resistance and enhancing overall efficiency.
  10. Where can I find detailed specifications for the STL7N6F7?
    Detailed specifications can be found on the official STMicroelectronics website and other authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (2x2)
Package / Case:6-PowerWDFN
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Similar Products

Part Number STL7N6F7 STL8N6F7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 3.5A, 10V 25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.4W (Ta) 3W (Ta), 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (2x2) PowerFlat™ (3.3x3.3)
Package / Case 6-PowerWDFN 8-PowerVDFN

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