STL56N3LLH5
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STMicroelectronics STL56N3LLH5

Manufacturer No:
STL56N3LLH5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 56A POWERFLAT
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The STL56N3LLH5 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET H5 technology. This device is optimized to achieve very low on-state resistance and high current handling capabilities, making it suitable for a variety of high-performance applications. The MOSFET operates at a maximum voltage of 30 V and is packaged in a PowerFLAT 5x6 package, which enhances thermal performance and reduces footprint.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (Vds)30V
On-State Resistance (Rds(on))0.0076Ω
Continuous Drain Current (Id)56A
Package TypePowerFLAT 5x6
TechnologySTripFET H5

Key Features

  • Low on-state resistance (Rds(on)) of 0.0076 Ω, minimizing power losses.
  • High continuous drain current (Id) of 56 A, suitable for high-power applications.
  • Advanced STripFET H5 technology for improved performance and reliability.
  • Compact PowerFLAT 5x6 package for enhanced thermal dissipation and reduced footprint.
  • Optimized for low thermal resistance and high current density.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • High-power switching applications requiring low on-state resistance and high current handling.

Q & A

  1. What is the maximum drain-source voltage of the STL56N3LLH5?
    The maximum drain-source voltage (Vds) is 30 V.
  2. What is the typical on-state resistance of the STL56N3LLH5?
    The typical on-state resistance (Rds(on)) is 0.0076 Ω.
  3. What is the continuous drain current rating of the STL56N3LLH5?
    The continuous drain current (Id) is 56 A.
  4. In what package is the STL56N3LLH5 available?
    The STL56N3LLH5 is available in a PowerFLAT 5x6 package.
  5. What technology is used in the STL56N3LLH5?
    The STL56N3LLH5 uses STMicroelectronics' STripFET H5 technology.
  6. What are some common applications for the STL56N3LLH5?
    Common applications include power supplies, motor control systems, industrial automation, automotive systems, and high-power switching applications.
  7. How does the PowerFLAT 5x6 package benefit the STL56N3LLH5?
    The PowerFLAT 5x6 package enhances thermal dissipation and reduces the footprint, making it ideal for high-power density applications.
  8. Is the STL56N3LLH5 suitable for automotive applications?
    Yes, the STL56N3LLH5 is suitable for automotive applications, including electric and hybrid vehicles.
  9. What are the key advantages of using the STL56N3LLH5 in power supplies?
    The key advantages include low on-state resistance, high current handling, and improved thermal performance.
  10. Where can I find detailed specifications and datasheets for the STL56N3LLH5?
    Detailed specifications and datasheets can be found on the STMicroelectronics official website and other authorized distributors like Digi-Key, Mouser, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 4.5 V
Vgs (Max):+22V, -20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL56N3LLH5 STL66N3LLH5 STL58N3LLH5 STL51N3LLH5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 80A (Tc) 64A (Tc) 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 7.5A, 10V 5.8mOhm @ 10.5A, 10V 9mOhm @ 7.5A, 10V 14.5mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 4.5 V 12 nC @ 4.5 V 10 nC @ 4.5 V 5 nC @ 4.5 V
Vgs (Max) +22V, -20V ±22V +22V, -20V ±22V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 25 V 1500 pF @ 25 V 950 pF @ 25 V 724 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 62.5W (Tc) 72W (Tc) 4.8W (Ta), 62.5W (Tc) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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