STL66N3LLH5
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STMicroelectronics STL66N3LLH5

Manufacturer No:
STL66N3LLH5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 80A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL66N3LLH5 is a cutting-edge N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ H5 technology. This device is optimized to achieve very low on-state resistance, making it highly efficient and reliable for various high-current applications. The STL66N3LLH5 is AEC-Q101 qualified, ensuring its suitability for automotive and industrial environments. Its innovative design and high figure of merit (FoM) make it an excellent choice for applications requiring high performance and efficiency.

Key Specifications

ParameterValueParameterValue
ManufacturerSTMicroelectronicsProduct CategoryMOSFET
RoHSCompliantTechnologySilicon (Si)
Mounting StyleSMD/SMTPackage / CasePowerFLAT-5x6-8
Transistor PolarityN-ChannelNumber of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 VId - Continuous Drain Current21 A
Rds On - Drain-Source Resistance5.8 mOhmsVgs - Gate-Source Voltage-22 V, +22 V
Vgs th - Gate-Source Threshold Voltage3 VQg - Gate Charge12 nC
Minimum Operating Temperature-55°CMaximum Operating Temperature+175°C
Pd - Power Dissipation4.8 WChannel ModeEnhancement
QualificationAEC-Q101TradenameSTripFET
SeriesSTL66N3LLH5PackagingMouseReel
BrandSTMicroelectronicsConfigurationSingle
Fall Time4.5 nsRise Time14.5 ns
Typical Turn-Off Delay Time22.7 nsTypical Turn-On Delay Time9.3 ns

Key Features

  • AEC-Q101 qualified, ensuring automotive-grade reliability and performance.
  • Low on-resistance (Rds(on)) of 5.8 mOhms, enhancing efficiency and reducing power loss.
  • High avalanche ruggedness, providing robustness against transient conditions.
  • Low gate drive power loss, contributing to overall system efficiency.
  • Wettable flank package (PowerFLAT-5x6-8), facilitating easy inspection and soldering.

Applications

The STL66N3LLH5 is suitable for a variety of high-current applications, including:

  • Automotive systems such as motor control and power management.
  • Industrial switching applications, including DC/DC converters and uninterruptible power supplies (UPS).
  • Induction heater vaporizers and solar power systems.

Q & A

  1. What is the STL66N3LLH5? The STL66N3LLH5 is an N-channel Power MOSFET developed by STMicroelectronics using STripFET™ H5 technology.
  2. What are the key features of the STL66N3LLH5? It includes low on-resistance, high avalanche ruggedness, low gate drive power loss, and AEC-Q101 qualification.
  3. What is the maximum drain-source breakdown voltage of the STL66N3LLH5? The maximum drain-source breakdown voltage is 30 V.
  4. What is the continuous drain current rating of the STL66N3LLH5? The continuous drain current rating is 21 A.
  5. What are the operating temperature ranges for the STL66N3LLH5? The device operates from -55°C to +175°C.
  6. What type of package does the STL66N3LLH5 use? The STL66N3LLH5 uses a PowerFLAT-5x6-8 package with a wettable flank.
  7. Is the STL66N3LLH5 RoHS compliant? Yes, the STL66N3LLH5 is RoHS compliant.
  8. What are some typical applications for the STL66N3LLH5? Typical applications include automotive systems, industrial switching, DC/DC converters, UPS, induction heater vaporizers, and solar power systems.
  9. What is the gate-source threshold voltage of the STL66N3LLH5? The gate-source threshold voltage is 3 V.
  10. What is the typical turn-on and turn-off delay time for the STL66N3LLH5? The typical turn-on delay time is 9.3 ns, and the typical turn-off delay time is 22.7 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±22V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL66N3LLH5 STL56N3LLH5 STL60N3LLH5 STL65N3LLH5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 56A (Tc) 60A (Tc) 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 10.5A, 10V 9mOhm @ 7.5A, 10V 7.1mOhm @ 8.5A, 10V 5.8mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 6.5 nC @ 4.5 V 8 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±22V +22V, -20V ±22V ±22V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 950 pF @ 25 V 1290 pF @ 25 V 1500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 72W (Tc) 62.5W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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