Overview
The STL66N3LLH5 is a cutting-edge N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ H5 technology. This device is optimized to achieve very low on-state resistance, making it highly efficient and reliable for various high-current applications. The STL66N3LLH5 is AEC-Q101 qualified, ensuring its suitability for automotive and industrial environments. Its innovative design and high figure of merit (FoM) make it an excellent choice for applications requiring high performance and efficiency.
Key Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer | STMicroelectronics | Product Category | MOSFET |
RoHS | Compliant | Technology | Silicon (Si) |
Mounting Style | SMD/SMT | Package / Case | PowerFLAT-5x6-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 21 A |
Rds On - Drain-Source Resistance | 5.8 mOhms | Vgs - Gate-Source Voltage | -22 V, +22 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 12 nC |
Minimum Operating Temperature | -55°C | Maximum Operating Temperature | +175°C |
Pd - Power Dissipation | 4.8 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | STripFET |
Series | STL66N3LLH5 | Packaging | MouseReel |
Brand | STMicroelectronics | Configuration | Single |
Fall Time | 4.5 ns | Rise Time | 14.5 ns |
Typical Turn-Off Delay Time | 22.7 ns | Typical Turn-On Delay Time | 9.3 ns |
Key Features
- AEC-Q101 qualified, ensuring automotive-grade reliability and performance.
- Low on-resistance (Rds(on)) of 5.8 mOhms, enhancing efficiency and reducing power loss.
- High avalanche ruggedness, providing robustness against transient conditions.
- Low gate drive power loss, contributing to overall system efficiency.
- Wettable flank package (PowerFLAT-5x6-8), facilitating easy inspection and soldering.
Applications
The STL66N3LLH5 is suitable for a variety of high-current applications, including:
- Automotive systems such as motor control and power management.
- Industrial switching applications, including DC/DC converters and uninterruptible power supplies (UPS).
- Induction heater vaporizers and solar power systems.
Q & A
- What is the STL66N3LLH5? The STL66N3LLH5 is an N-channel Power MOSFET developed by STMicroelectronics using STripFET™ H5 technology.
- What are the key features of the STL66N3LLH5? It includes low on-resistance, high avalanche ruggedness, low gate drive power loss, and AEC-Q101 qualification.
- What is the maximum drain-source breakdown voltage of the STL66N3LLH5? The maximum drain-source breakdown voltage is 30 V.
- What is the continuous drain current rating of the STL66N3LLH5? The continuous drain current rating is 21 A.
- What are the operating temperature ranges for the STL66N3LLH5? The device operates from -55°C to +175°C.
- What type of package does the STL66N3LLH5 use? The STL66N3LLH5 uses a PowerFLAT-5x6-8 package with a wettable flank.
- Is the STL66N3LLH5 RoHS compliant? Yes, the STL66N3LLH5 is RoHS compliant.
- What are some typical applications for the STL66N3LLH5? Typical applications include automotive systems, industrial switching, DC/DC converters, UPS, induction heater vaporizers, and solar power systems.
- What is the gate-source threshold voltage of the STL66N3LLH5? The gate-source threshold voltage is 3 V.
- What is the typical turn-on and turn-off delay time for the STL66N3LLH5? The typical turn-on delay time is 9.3 ns, and the typical turn-off delay time is 22.7 ns.