STL15N60M2-EP
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STMicroelectronics STL15N60M2-EP

Manufacturer No:
STL15N60M2-EP
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 7A POWERFLAT HV
Delivery:
Payment:
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Product Introduction

Overview

The STL15N60M2-EP is an N-channel Power MOSFET developed by STMicroelectronics using their advanced MDmesh™ M2 enhanced performance (EP) technology. This device is designed to offer high efficiency and reliability in various power management applications. The MOSFET features a strip layout and improved vertical structure, which enhances its electrical performance and thermal management capabilities.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)7 A (Tc)
PD (Power Dissipation)55 W (Tc)
VGS(th) (Threshold Voltage)2.5 V to 4 V
RDS(on) (On-Resistance)Typically 0.55 Ω
PackageSurface Mount PowerFlat™ (5x6) HV

Key Features

  • MDmesh™ M2 EP technology for enhanced performance and efficiency.
  • Strip layout for improved electrical and thermal performance.
  • High voltage rating of 600 V.
  • High current capability of 7 A.
  • Low on-resistance (RDS(on)) of typically 0.55 Ω.
  • Surface Mount PowerFlat™ (5x6) HV package for compact and reliable mounting.

Applications

The STL15N60M2-EP is suitable for a variety of power management applications, including:

  • Switch-mode power supplies.
  • Motor control and drives.
  • Power factor correction (PFC) circuits.
  • High-voltage DC-DC converters.
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STL15N60M2-EP?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STL15N60M2-EP?
    The typical on-resistance (RDS(on)) is 0.55 Ω.
  3. What package type does the STL15N60M2-EP use?
    The STL15N60M2-EP uses a Surface Mount PowerFlat™ (5x6) HV package.
  4. What is the maximum drain current of the STL15N60M2-EP?
    The maximum drain current is 7 A (Tc).
  5. What technology is used in the STL15N60M2-EP?
    The STL15N60M2-EP is developed using MDmesh™ M2 enhanced performance (EP) technology.
  6. What are some common applications for the STL15N60M2-EP?
    Common applications include switch-mode power supplies, motor control and drives, power factor correction (PFC) circuits, and high-voltage DC-DC converters.
  7. What is the power dissipation capability of the STL15N60M2-EP?
    The power dissipation capability is 55 W (Tc).
  8. Is the STL15N60M2-EP suitable for automotive applications?
    Yes, it is suitable for automotive and industrial systems requiring high reliability and efficiency.
  9. Where can I find detailed specifications for the STL15N60M2-EP?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.
  10. What is the threshold voltage range of the STL15N60M2-EP?
    The threshold voltage range is 2.5 V to 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:418mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL15N60M2-EP STL25N60M2-EP STL11N60M2-EP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 16A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 418mOhm @ 4.5A, 10V 205mOhm @ 8A, 10V -
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 29 nC @ 10 V -
Vgs (Max) ±25V ±25V -
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 100 V 1090 pF @ 100 V -
FET Feature - - -
Power Dissipation (Max) 55W (Tc) 125W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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