STL15N60M2-EP
  • Share:

STMicroelectronics STL15N60M2-EP

Manufacturer No:
STL15N60M2-EP
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 7A POWERFLAT HV
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL15N60M2-EP is an N-channel Power MOSFET developed by STMicroelectronics using their advanced MDmesh™ M2 enhanced performance (EP) technology. This device is designed to offer high efficiency and reliability in various power management applications. The MOSFET features a strip layout and improved vertical structure, which enhances its electrical performance and thermal management capabilities.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)7 A (Tc)
PD (Power Dissipation)55 W (Tc)
VGS(th) (Threshold Voltage)2.5 V to 4 V
RDS(on) (On-Resistance)Typically 0.55 Ω
PackageSurface Mount PowerFlat™ (5x6) HV

Key Features

  • MDmesh™ M2 EP technology for enhanced performance and efficiency.
  • Strip layout for improved electrical and thermal performance.
  • High voltage rating of 600 V.
  • High current capability of 7 A.
  • Low on-resistance (RDS(on)) of typically 0.55 Ω.
  • Surface Mount PowerFlat™ (5x6) HV package for compact and reliable mounting.

Applications

The STL15N60M2-EP is suitable for a variety of power management applications, including:

  • Switch-mode power supplies.
  • Motor control and drives.
  • Power factor correction (PFC) circuits.
  • High-voltage DC-DC converters.
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STL15N60M2-EP?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STL15N60M2-EP?
    The typical on-resistance (RDS(on)) is 0.55 Ω.
  3. What package type does the STL15N60M2-EP use?
    The STL15N60M2-EP uses a Surface Mount PowerFlat™ (5x6) HV package.
  4. What is the maximum drain current of the STL15N60M2-EP?
    The maximum drain current is 7 A (Tc).
  5. What technology is used in the STL15N60M2-EP?
    The STL15N60M2-EP is developed using MDmesh™ M2 enhanced performance (EP) technology.
  6. What are some common applications for the STL15N60M2-EP?
    Common applications include switch-mode power supplies, motor control and drives, power factor correction (PFC) circuits, and high-voltage DC-DC converters.
  7. What is the power dissipation capability of the STL15N60M2-EP?
    The power dissipation capability is 55 W (Tc).
  8. Is the STL15N60M2-EP suitable for automotive applications?
    Yes, it is suitable for automotive and industrial systems requiring high reliability and efficiency.
  9. Where can I find detailed specifications for the STL15N60M2-EP?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.
  10. What is the threshold voltage range of the STL15N60M2-EP?
    The threshold voltage range is 2.5 V to 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:418mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$2.17
13

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL15N60M2-EP STL25N60M2-EP STL11N60M2-EP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 16A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 418mOhm @ 4.5A, 10V 205mOhm @ 8A, 10V -
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 29 nC @ 10 V -
Vgs (Max) ±25V ±25V -
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 100 V 1090 pF @ 100 V -
FET Feature - - -
Power Dissipation (Max) 55W (Tc) 125W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP