Overview
The STL120N8F7 is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics. This device utilizes the advanced STripFET F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching operations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 80 | V |
| Gate-source voltage (VGS) | 20 | V |
| Drain current (continuous) at T = 25°C | 120 | A |
| Drain current (continuous) at T = 100°C | 90 | A |
| Drain current (pulsed) | 480 | A |
| Total dissipation at T = 25°C | 140 | W |
| Thermal resistance junction-pcb | 31.3 | C/W |
| Thermal resistance junction-case | 1.05 | C/W |
| On-state resistance (RDS(on)) | 4.0 mΩ (typ.) | mΩ |
| Package | PowerFLAT 5x6 |
Key Features
- Utilizes STripFET F7 technology with an enhanced trench gate structure, resulting in very low on-state resistance (RDS(on) = 4.0 mΩ typ.).
- Reduced internal capacitance and gate charge for faster and more efficient switching operations.
- High avalanche ruggedness.
- Low C/C ratio for improved EMI immunity.
- PowerFLAT 5x6 package for efficient thermal management.
Applications
The STL120N8F7 is particularly suited for high-performance switching applications due to its low on-state resistance, fast switching capabilities, and high current handling. It is ideal for use in power supplies, motor control, and other high-power electronic systems where efficient and reliable operation is critical.
Q & A
- What is the maximum drain-source voltage of the STL120N8F7?
The maximum drain-source voltage (VDS) is 80 V. - What is the typical on-state resistance of the STL120N8F7?
The typical on-state resistance (RDS(on)) is 4.0 mΩ. - What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 120 A. - What is the package type of the STL120N8F7?
The package type is PowerFLAT 5x6. - What are the key benefits of the STripFET F7 technology used in the STL120N8F7?
The STripFET F7 technology provides very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching operations. - What are some typical applications for the STL120N8F7?
The STL120N8F7 is suited for high-performance switching applications, including power supplies and motor control. - What is the thermal resistance junction-pcb of the STL120N8F7?
The thermal resistance junction-pcb is 31.3 C/W. - What is the maximum total dissipation at 25°C?
The maximum total dissipation at 25°C is 140 W. - Does the STL120N8F7 have high avalanche ruggedness?
Yes, the STL120N8F7 has high avalanche ruggedness. - How does the STL120N8F7 improve EMI immunity?
The STL120N8F7 has a low C/C ratio, which improves EMI immunity.
