Overview
The STL100N8F7 is a high-power, N-channel Power MOSFET designed by STMicroelectronics. It utilizes the advanced STripFET F7 technology with an enhanced trench gate structure, resulting in very low on-state resistance. This technology also reduces internal capacitance and gate charge, enabling faster and more efficient switching. The MOSFET is packaged in a PowerFLAT 5x6 configuration, which ensures a compact size and efficient cooling. It is ideal for applications requiring robust switching, high current capability, and accurate temperature control.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 80 | V |
| VGS (Gate-source voltage) | ±20 | V |
| ID (Drain current, continuous) at Tc = 25 °C | 100 | A |
| ID (Drain current, continuous) at Tc = 100 °C | 71 | A |
| IDM (Drain current, pulsed) | 400 | A |
| RDS(on) max (On-state resistance) | 6.1 mΩ | mΩ |
| PTOT (Total power dissipation) at Tc = 25 °C | 120 | W |
| TJ (Operating junction temperature range) | -55 to 175 | °C |
| Tstg (Storage temperature range) | -55 to 150 | °C |
Key Features
- Among the lowest RDS(on) on the market, ensuring minimal power losses.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness for enhanced reliability.
- Reduced internal capacitance and gate charge for faster and more efficient switching.
- Wide operating temperature range from -55 to 175 °C.
- Fast recovery time and low leakage current.
Applications
- Power supplies: Ideal for high-frequency power supply applications due to its low on-state resistance and fast switching times.
- Motor controls: Suitable for industrial motor control systems requiring high current capability and precise temperature control.
- Renewable energy systems: Used in solar and wind power systems for efficient power conversion and management.
- Electric vehicle charging systems: High-power switching requirements are met with its robust and efficient performance.
Q & A
- What is the maximum drain-source voltage of the STL100N8F7?
The maximum drain-source voltage (VDS) is 80 V.
- What is the typical on-state resistance of the STL100N8F7?
The typical on-state resistance (RDS(on)) is 6.1 mΩ.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 100 A.
- What is the operating junction temperature range of the STL100N8F7?
The operating junction temperature range is from -55 to 175 °C.
- What package type is used for the STL100N8F7?
The STL100N8F7 is packaged in a PowerFLAT 5x6 configuration.
- What are the key features of the STripFET F7 technology used in the STL100N8F7?
The key features include very low on-state resistance, reduced internal capacitance, and gate charge for faster and more efficient switching.
- What applications is the STL100N8F7 suitable for?
The STL100N8F7 is suitable for power supplies, motor controls, renewable energy systems, and electric vehicle charging systems.
- What is the total power dissipation at 25 °C for the STL100N8F7?
The total power dissipation (PTOT) at 25 °C is 120 W.
- Does the STL100N8F7 have any special features for EMI immunity?
Yes, it has a low Crss/Ciss ratio for enhanced EMI immunity.
- What is the maximum pulsed drain current for the STL100N8F7?
The maximum pulsed drain current (IDM) is 400 A.
