Overview
The STL130N8F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. These features enable faster and more efficient switching, making it an ideal choice for various high-power applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Order Code | STL130N8F7 | |
VDS (Drain-source voltage) | 80 | V |
VGS (Gate-source voltage) | ±20 | V |
ID (Continuous drain current at TC = 25 °C) | 120 | A |
ID (Continuous drain current at TC = 100 °C) | 93 | A |
RDS(on) (Static drain-source on-resistance at VGS = 10 V, ID = 13 A) | 3.0 - 3.6 | mΩ |
PTOT (Total power dissipation at TC = 25 °C) | 135 | W |
EAS (Single pulse avalanche energy) | 515 | mJ |
Tstg (Storage temperature range) | -55 to 175 | °C |
TJ (Operating junction temperature range) | -55 to 175 | °C |
Package | PowerFLAT 5x6 |
Key Features
- Among the lowest RDS(on) on the market, ensuring minimal power loss during operation.
- Excellent figure of merit (FoM) for high efficiency in switching applications.
- Low Crss/Ciss ratio for enhanced EMI immunity.
- High avalanche ruggedness, providing robustness against transient events.
- Reduced internal capacitance and gate charge for faster switching times.
Applications
The STL130N8F7 is designed for high-power switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Industrial automation and control systems.
- Renewable energy systems, such as solar and wind power inverters.
- Electric vehicles and charging infrastructure.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL130N8F7?
The maximum drain-source voltage (VDS) is 80 V.
- What is the typical on-state resistance (RDS(on)) of the STL130N8F7?
The typical on-state resistance (RDS(on)) is 3.0 mΩ at VGS = 10 V and ID = 13 A.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 120 A.
- What is the total power dissipation (PTOT) at TC = 25 °C?
The total power dissipation (PTOT) at TC = 25 °C is 135 W.
- What is the storage temperature range for the STL130N8F7?
The storage temperature range is -55 to 175 °C.
- What package type is the STL130N8F7 available in?
The STL130N8F7 is available in the PowerFLAT 5x6 package.
- What are some key applications for the STL130N8F7?
The STL130N8F7 is suitable for power supplies, DC-DC converters, motor control, industrial automation, renewable energy systems, and electric vehicles.
- What is the significance of the low Crss/Ciss ratio in the STL130N8F7?
The low Crss/Ciss ratio enhances EMI immunity, making the device more robust in noisy environments.
- How does the STL130N8F7's avalanche ruggedness benefit its operation?
The high avalanche ruggedness provides protection against transient events, ensuring the device's reliability and longevity.
- What is the typical turn-on delay time (td(on)) for the STL130N8F7?
The typical turn-on delay time (td(on)) is 26 ns under specified test conditions.