STL130N8F7
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STMicroelectronics STL130N8F7

Manufacturer No:
STL130N8F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 130A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL130N8F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. These features enable faster and more efficient switching, making it an ideal choice for various high-power applications.

Key Specifications

Parameter Value Unit
Order Code STL130N8F7
VDS (Drain-source voltage) 80 V
VGS (Gate-source voltage) ±20 V
ID (Continuous drain current at TC = 25 °C) 120 A
ID (Continuous drain current at TC = 100 °C) 93 A
RDS(on) (Static drain-source on-resistance at VGS = 10 V, ID = 13 A) 3.0 - 3.6
PTOT (Total power dissipation at TC = 25 °C) 135 W
EAS (Single pulse avalanche energy) 515 mJ
Tstg (Storage temperature range) -55 to 175 °C
TJ (Operating junction temperature range) -55 to 175 °C
Package PowerFLAT 5x6

Key Features

  • Among the lowest RDS(on) on the market, ensuring minimal power loss during operation.
  • Excellent figure of merit (FoM) for high efficiency in switching applications.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness, providing robustness against transient events.
  • Reduced internal capacitance and gate charge for faster switching times.

Applications

The STL130N8F7 is designed for high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • Electric vehicles and charging infrastructure.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL130N8F7?

    The maximum drain-source voltage (VDS) is 80 V.

  2. What is the typical on-state resistance (RDS(on)) of the STL130N8F7?

    The typical on-state resistance (RDS(on)) is 3.0 mΩ at VGS = 10 V and ID = 13 A.

  3. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 120 A.

  4. What is the total power dissipation (PTOT) at TC = 25 °C?

    The total power dissipation (PTOT) at TC = 25 °C is 135 W.

  5. What is the storage temperature range for the STL130N8F7?

    The storage temperature range is -55 to 175 °C.

  6. What package type is the STL130N8F7 available in?

    The STL130N8F7 is available in the PowerFLAT 5x6 package.

  7. What are some key applications for the STL130N8F7?

    The STL130N8F7 is suitable for power supplies, DC-DC converters, motor control, industrial automation, renewable energy systems, and electric vehicles.

  8. What is the significance of the low Crss/Ciss ratio in the STL130N8F7?

    The low Crss/Ciss ratio enhances EMI immunity, making the device more robust in noisy environments.

  9. How does the STL130N8F7's avalanche ruggedness benefit its operation?

    The high avalanche ruggedness provides protection against transient events, ensuring the device's reliability and longevity.

  10. What is the typical turn-on delay time (td(on)) for the STL130N8F7?

    The typical turn-on delay time (td(on)) is 26 ns under specified test conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6340 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):135W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL130N8F7 STL100N8F7 STL120N8F7 STL130N6F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 100A (Tc) 120A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 13A, 10V 6.1mOhm @ 10A, 10V 4.4mOhm @ 11.5A, 10V 3.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 46.8 nC @ 10 V 60 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6340 pF @ 40 V 3435 pF @ 40 V 4570 pF @ 25 V 2600 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 135W (Tc) 4.8W (Ta), 120W (Tc) 4.8W (Ta), 140W (Tc) 4.8W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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