STL130N6F7
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STMicroelectronics STL130N6F7

Manufacturer No:
STL130N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 130A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL130N6F7 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This design results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching. The STL130N6F7 is packaged in a PowerFLAT™ 5x6 package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 130 A
Continuous Drain Current (ID) at TC = 100°C 95 A
Pulsed Drain Current (IDM) 520 A
On-State Resistance (RDS(on)) max. 0.0035 Ω
Total Dissipation at TC = 25°C (PTOT) 125 W
Operating Junction Temperature (Tj) -55 to 175 °C
Storage Temperature (Tstg) -55 to 175 °C
Thermal Resistance Junction-PCB (Rthj-pcb) 31.3 °C/W
Thermal Resistance Junction-Case (Rthj-case) 1.2 °C/W

Key Features

  • Among the lowest RDS(on) on the market, with a maximum value of 0.0035 Ω.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for improved EMI immunity.
  • High avalanche ruggedness for enhanced reliability.
  • Advanced STripFET™ F7 technology with an enhanced trench gate structure.
  • Reduced internal capacitance and gate charge for faster switching times.

Applications

The STL130N6F7 is designed for various high-power switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems (though not specifically automotive-grade, it can be used in certain automotive applications).
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL130N6F7?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) of the STL130N6F7?

    The typical on-state resistance (RDS(on)) is 0.003 Ω.

  3. What is the continuous drain current (ID) at 25°C for the STL130N6F7?

    The continuous drain current (ID) at 25°C is 130 A.

  4. What is the thermal resistance junction-PCB (Rthj-pcb) of the STL130N6F7?

    The thermal resistance junction-PCB (Rthj-pcb) is 31.3 °C/W.

  5. What package type is the STL130N6F7 available in?

    The STL130N6F7 is available in a PowerFLAT™ 5x6 package.

  6. What are some key features of the STL130N6F7?

    Key features include low RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness.

  7. What are typical applications for the STL130N6F7?

    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.

  8. What is the operating junction temperature range for the STL130N6F7?

    The operating junction temperature range is -55 to 175 °C.

  9. What is the storage temperature range for the STL130N6F7?

    The storage temperature range is -55 to 175 °C.

  10. How does the STL130N6F7 enhance switching efficiency?

    The STL130N6F7 enhances switching efficiency through its low on-state resistance, reduced internal capacitance, and lower gate charge.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4.8W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL130N6F7 STL140N6F7 STL130N8F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 145A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 13A, 10V 2.5mOhm @ 16A, 10V 3.6mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 1mA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 40 nC @ 10 V 96 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V 2700 pF @ 25 V 6340 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 4.8W (Ta), 125W (Tc) 4.8W (Ta), 125W (Tc) 135W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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