STL140N6F7
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STMicroelectronics STL140N6F7

Manufacturer No:
STL140N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 145A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL140N6F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it highly suitable for various high-performance applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at Tcase = 25 °C 140 A
Continuous Drain Current (ID) at Tcase = 100 °C 107 A
Pulsed Drain Current (IDM) 560 A
Total Dissipation at Tcase = 25 °C (PTOT) 125 W
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 15 A 0.0024 (typ.), 0.0028 (max.) Ω
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Maximum Junction Temperature (Tj) 175 °C
Storage Temperature (Tstg) -55 to 175 °C

Key Features

  • Among the lowest RDS(on) on the market, with a typical value of 0.0024 Ω.
  • Excellent figure of merit (FoM) for high efficiency in switching applications.
  • Low Crss/Ciss ratio for improved EMI immunity.
  • High avalanche ruggedness, enhancing reliability under harsh conditions.
  • Enhanced trench gate structure reducing internal capacitance and gate charge for faster switching.

Applications

The STL140N6F7 is primarily used in switching applications where high current handling and low on-state resistance are critical. These include:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching circuits.
  • Automotive and industrial power management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL140N6F7?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) of the STL140N6F7?

    The typical on-state resistance (RDS(on)) is 0.0024 Ω.

  3. What is the maximum continuous drain current (ID) at Tcase = 25 °C?

    The maximum continuous drain current (ID) at Tcase = 25 °C is 140 A.

  4. What is the maximum junction temperature (Tj) of the STL140N6F7?

    The maximum junction temperature (Tj) is 175 °C.

  5. What is the storage temperature range for the STL140N6F7?

    The storage temperature range is -55 to 175 °C.

  6. What package type is the STL140N6F7 available in?

    The STL140N6F7 is available in a PowerFLAT™ 5x6 package.

  7. What are the key features of the STripFET F7 technology used in the STL140N6F7?

    The STripFET F7 technology features very low on-state resistance, reduced internal capacitance, and gate charge, along with high avalanche ruggedness and low Crss/Ciss ratio for EMI immunity.

  8. What are some typical applications for the STL140N6F7?

    Typical applications include power supplies, DC-DC converters, motor control and drive systems, high-power switching circuits, and automotive and industrial power management systems.

  9. What is the thermal resistance junction-case (Rthj-case) of the STL140N6F7?

    The thermal resistance junction-case (Rthj-case) is 1.2 °C/W.

  10. What is the total dissipation at Tcase = 25 °C (PTOT) for the STL140N6F7?

    The total dissipation at Tcase = 25 °C (PTOT) is 125 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:145A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4.8W (Ta), 125W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL140N6F7 STL130N6F7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 145A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 16A, 10V 3.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 2600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 4.8W (Ta), 125W (Tc) 4.8W (Ta), 125W (Tc)
Operating Temperature 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN

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