STF3NK80Z
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STMicroelectronics STF3NK80Z

Manufacturer No:
STF3NK80Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 2.5A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STF3NK80Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is part of STMicroelectronics' optimized PowerMESH series, designed to offer significant reductions in on-resistance and enhanced dv/dt capability. The STF3NK80Z is packaged in a TO-220FP format, making it suitable for a variety of high-power applications. It features Zener protection, minimized gate charge, and very low intrinsic capacitance, ensuring high performance and reliability in demanding environments.

Key Specifications

Parameter Value
Order Code STF3NK80Z
Drain-Source Voltage (VDS) 800 V
On-Resistance (RDS(on)) 3.6 Ω (typ.), 4.5 Ω (max.)
Continuous Drain Current (ID) 2.5 A
Package TO-220FP
Packing Tube

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected
  • Very low intrinsic capacitance
  • Very good manufacturing repeatability

Applications

The STF3NK80Z is designed for various high-power switching applications, including:

  • Motor control
  • High-frequency switching
  • Power-switching converters
  • Other demanding high-voltage applications

Q & A

  1. What is the maximum drain-source voltage of the STF3NK80Z?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance of the STF3NK80Z?

    The typical on-resistance (RDS(on)) is 3.6 Ω, with a maximum of 4.5 Ω.

  3. What is the continuous drain current rating of the STF3NK80Z?

    The continuous drain current (ID) is 2.5 A.

  4. In what package is the STF3NK80Z available?

    The STF3NK80Z is available in the TO-220FP package.

  5. What are the key features of the STF3NK80Z?

    Key features include extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, Zener protection, and very low intrinsic capacitance.

  6. What applications is the STF3NK80Z suitable for?

    The STF3NK80Z is suitable for motor control, high-frequency switching, power-switching converters, and other demanding high-voltage applications.

  7. What technology is used in the STF3NK80Z?

    The STF3NK80Z is developed using STMicroelectronics' SuperMESH technology.

  8. Is the STF3NK80Z Zener-protected?
  9. What is the packing method for the STF3NK80Z?

    The STF3NK80Z is packed in tubes.

  10. Where can I find more detailed specifications for the STF3NK80Z?

    You can find detailed specifications in the datasheet available on STMicroelectronics' official website or through distributors like Mouser, Digi-Key, and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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In Stock

$2.17
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Same Series
STD3NK80Z-1
STD3NK80Z-1
MOSFET N-CH 800V 2.5A IPAK
STP3NK80Z
STP3NK80Z
MOSFET N-CH 800V 2.5A TO220AB
STF3NK80Z
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP

Similar Products

Part Number STF3NK80Z STF9NK80Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.25A, 10V 1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 25 V 1900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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