STD80N6F6
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STMicroelectronics STD80N6F6

Manufacturer No:
STD80N6F6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 80A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD80N6F6 is an N-channel Power MOSFET developed by STMicroelectronics using the STripFET™ F6 technology. This device features a new trench gate structure, enhancing its performance and efficiency. It is designed for high-power applications and is particularly suited for automotive and industrial use due to its robust specifications and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
RDS(on) (On-State Resistance)4.4 mΩ (typical)
ID (Drain Current)80 A
PackageDPAK
TechnologySTripFET™ F6

Key Features

  • High drain current capability of 80 A
  • Low on-state resistance (RDS(on)) of 4.4 mΩ (typical)
  • Automotive-grade reliability and robustness
  • New trench gate structure for improved performance
  • DPAK package for efficient heat dissipation and compact design

Applications

The STD80N6F6 is suitable for a variety of high-power applications, including:

  • Automotive systems (e.g., electric vehicles, power steering, and braking systems)
  • Industrial power supplies and motor control
  • Power conversion and switching applications
  • High-efficiency DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the STD80N6F6?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the typical on-state resistance of the STD80N6F6?
    The typical on-state resistance (RDS(on)) is 4.4 mΩ.
  3. What is the maximum drain current of the STD80N6F6?
    The maximum drain current (ID) is 80 A.
  4. In which package is the STD80N6F6 available?
    The STD80N6F6 is available in a DPAK package.
  5. What technology is used in the STD80N6F6?
    The STD80N6F6 uses STMicroelectronics' STripFET™ F6 technology.
  6. Is the STD80N6F6 suitable for automotive applications?
    Yes, the STD80N6F6 is automotive-grade and suitable for various automotive applications.
  7. What are some common applications of the STD80N6F6?
    Common applications include automotive systems, industrial power supplies, motor control, and high-efficiency DC-DC converters.
  8. What are the benefits of the new trench gate structure in the STD80N6F6?
    The new trench gate structure enhances the device's performance and efficiency by reducing on-state resistance and improving thermal characteristics.
  9. How does the DPAK package contribute to the device's performance?
    The DPAK package provides efficient heat dissipation and a compact design, making it suitable for high-power applications.
  10. Where can I find detailed specifications and datasheets for the STD80N6F6?
    Detailed specifications and datasheets can be found on STMicroelectronics' official website and through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD80N6F6 STD80N6F7 STD80N4F6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 40A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 40A, 10V 8mOhm @ 20A, 10V 6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V 25 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7480 pF @ 25 V 1600 pF @ 30 V 2150 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 120W (Tc) 100W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK D-PAK (TO-252) DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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