Overview
The STD80N6F6 is an N-channel Power MOSFET developed by STMicroelectronics using the STripFET™ F6 technology. This device features a new trench gate structure, enhancing its performance and efficiency. It is designed for high-power applications and is particularly suited for automotive and industrial use due to its robust specifications and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 60 V |
| RDS(on) (On-State Resistance) | 4.4 mΩ (typical) |
| ID (Drain Current) | 80 A |
| Package | DPAK |
| Technology | STripFET™ F6 |
Key Features
- High drain current capability of 80 A
- Low on-state resistance (RDS(on)) of 4.4 mΩ (typical)
- Automotive-grade reliability and robustness
- New trench gate structure for improved performance
- DPAK package for efficient heat dissipation and compact design
Applications
The STD80N6F6 is suitable for a variety of high-power applications, including:
- Automotive systems (e.g., electric vehicles, power steering, and braking systems)
- Industrial power supplies and motor control
- Power conversion and switching applications
- High-efficiency DC-DC converters
Q & A
- What is the maximum drain-source voltage of the STD80N6F6?
The maximum drain-source voltage (VDS) is 60 V. - What is the typical on-state resistance of the STD80N6F6?
The typical on-state resistance (RDS(on)) is 4.4 mΩ. - What is the maximum drain current of the STD80N6F6?
The maximum drain current (ID) is 80 A. - In which package is the STD80N6F6 available?
The STD80N6F6 is available in a DPAK package. - What technology is used in the STD80N6F6?
The STD80N6F6 uses STMicroelectronics' STripFET™ F6 technology. - Is the STD80N6F6 suitable for automotive applications?
Yes, the STD80N6F6 is automotive-grade and suitable for various automotive applications. - What are some common applications of the STD80N6F6?
Common applications include automotive systems, industrial power supplies, motor control, and high-efficiency DC-DC converters. - What are the benefits of the new trench gate structure in the STD80N6F6?
The new trench gate structure enhances the device's performance and efficiency by reducing on-state resistance and improving thermal characteristics. - How does the DPAK package contribute to the device's performance?
The DPAK package provides efficient heat dissipation and a compact design, making it suitable for high-power applications. - Where can I find detailed specifications and datasheets for the STD80N6F6?
Detailed specifications and datasheets can be found on STMicroelectronics' official website and through distributors like Digi-Key and Mouser.
