Overview
The STD80N4F6 is an N-channel Power MOSFET developed by STMicroelectronics using their 6th generation of STripFET™ DeepGATE™ technology. This device is designed to offer high performance and efficiency in various power management applications. The new gate structure of the STripFET™ DeepGATE™ technology enhances the device's switching characteristics and overall reliability.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 40 V |
| ID (Drain Current) | 80 A |
| RDS(on) (On-State Resistance) | 5.5 mΩ (typical) |
| Package | DPAK |
| Gate Charge | Very low switching gate charge |
| Avalanche Ruggedness | High |
Key Features
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
- High power density
- Enhanced switching characteristics due to the new gate structure of STripFET™ DeepGATE™ technology
Applications
The STD80N4F6 is suitable for a variety of power management applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drives
- Automotive systems
- Industrial power systems
- High-efficiency switching applications
Q & A
- What is the drain-source voltage rating of the STD80N4F6?
The drain-source voltage rating is 40 V. - What is the typical on-state resistance of the STD80N4F6?
The typical on-state resistance is 5.5 mΩ. - What package type is the STD80N4F6 available in?
The STD80N4F6 is available in a DPAK package. - What are the key benefits of the STripFET™ DeepGATE™ technology used in the STD80N4F6?
The key benefits include very low switching gate charge, high avalanche ruggedness, and low gate drive power losses. - What are some common applications for the STD80N4F6?
Common applications include power supplies, DC-DC converters, motor control, automotive systems, and industrial power systems. - How does the new gate structure of the STripFET™ DeepGATE™ technology enhance the device's performance?
The new gate structure enhances the device's switching characteristics and overall reliability. - What is the maximum drain current rating of the STD80N4F6?
The maximum drain current rating is 80 A. - Where can I find detailed specifications for the STD80N4F6?
Detailed specifications can be found in the datasheet available on STMicroelectronics' official website, DigiKey, Mouser, and other electronic component distributors. - Is the STD80N4F6 suitable for high-efficiency switching applications?
Yes, the STD80N4F6 is highly suitable for high-efficiency switching applications due to its low gate drive power losses and high power density. - What is the significance of high avalanche ruggedness in the STD80N4F6?
High avalanche ruggedness ensures the device can withstand high energy pulses and transient conditions, enhancing its reliability and lifespan.
