Overview
The STD2HNK60Z-1 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This technology is an optimization of the well-established PowerMESH, offering significant reductions in on-resistance and enhanced dv/dt capability. These devices are designed to meet the demands of the most challenging applications, particularly in switching scenarios.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 2.0 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 1.26 | A |
| Pulsed drain current (IDM) | 8 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 45 | W |
| Gate-source ESD (HBM) | 2 kV | kV |
| Thermal resistance, junction-to-case (RthJC) | 2.77 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 100 | °C/W |
| Static drain-source on-resistance (RDS(on)) | 4.8 Ω | Ω |
| Gate threshold voltage (VGS(th)) | 3 to 4.5 V | V |
| Turn-on delay time (td(on)) | 10 ns | ns |
| Rise time (tr) | 30 ns | ns |
| Turn-off delay time (td(off)) | 23 ns | ns |
| Fall time (tf) | 50 ns | ns |
Key Features
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Zener-protected
- Extremely high dv/dt capability
- Improved ESD capability
Applications
The STD2HNK60Z-1 is primarily used in switching applications, where its high voltage rating, low on-resistance, and high dv/dt capability make it particularly suitable. These applications can include power supplies, motor control, and other high-power switching scenarios.
Q & A
- What is the drain-source voltage rating of the STD2HNK60Z-1?
The drain-source voltage (VDS) rating is 600 V.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 2.0 A.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 2.77 °C/W.
- What is the gate-source threshold voltage range?
The gate-source threshold voltage (VGS(th)) range is from 3 to 4.5 V.
- What are the key features of the STD2HNK60Z-1?
The key features include 100% avalanche testing, minimized gate charge, very low intrinsic capacitance, Zener protection, high dv/dt capability, and improved ESD capability.
- In what package is the STD2HNK60Z-1 available?
The STD2HNK60Z-1 is available in the IPAK package.
- What are the typical switching times for the STD2HNK60Z-1?
The typical turn-on delay time (td(on)) is 10 ns, rise time (tr) is 30 ns, turn-off delay time (td(off)) is 23 ns, and fall time (tf) is 50 ns.
- What is the total power dissipation at 25 °C?
The total power dissipation (PTOT) at 25 °C is 45 W.
- Is the STD2HNK60Z-1 RoHS compliant?
- What technology is used in the development of the STD2HNK60Z-1?
The STD2HNK60Z-1 is developed using STMicroelectronics' SuperMESH technology.
