Overview
The STF2HNK60Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the SuperMESH technology. This device is optimized from the well-established PowerMESH technology, offering significant reductions in on-resistance and enhanced dv/dt capability. The STF2HNK60Z is designed for the most demanding applications, ensuring high performance and reliability. It is packaged in a TO-220FP package, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 2.0 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 1.26 | A |
| Pulsed drain current (IDM) | 8 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 20 | W |
| Static drain-source on-resistance (RDS(on)) | 4.4 - 4.8 | Ω |
| Thermal resistance, junction-to-case (RthJC) | 6.25 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 62.5 | °C/W |
| Gate charge (Qg) | 11 - 15 | nC |
| Turn-on delay time (td(on)) | 10 | ns |
| Rise time (tr) | 30 | ns |
| Turn-off delay time (td(off)) | 23 | ns |
| Fall time (tf) | 50 | ns |
Key Features
- Zener-protected for enhanced reliability
- 100% avalanche tested to ensure robustness
- Gate charge minimized for efficient switching
- Very low intrinsic capacitance
- Extremely high dv/dt capability for demanding applications
- ESD improved capability for better protection
Applications
The STF2HNK60Z is primarily used in switching applications where high voltage and current handling are required. These include but are not limited to:
- Power supplies and converters
- Motor control and drives
- High-frequency switching circuits
- Industrial and automotive power management systems
Q & A
- What is the maximum drain-source voltage of the STF2HNK60Z?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance of the STF2HNK60Z?
The typical on-resistance (RDS(on)) is 3.5 Ω, with a maximum of 4.8 Ω.
- What is the continuous drain current at 25 °C for the STF2HNK60Z?
The continuous drain current (ID) at 25 °C is 2.0 A.
- What is the thermal resistance from junction to case for the STF2HNK60Z?
The thermal resistance from junction to case (RthJC) is 6.25 °C/W.
- What are the key features of the STF2HNK60Z?
The key features include Zener protection, 100% avalanche testing, minimized gate charge, very low intrinsic capacitance, and high dv/dt capability.
- In what package is the STF2HNK60Z available?
The STF2HNK60Z is available in a TO-220FP package.
- What are the typical switching times for the STF2HNK60Z?
The typical turn-on delay time (td(on)) is 10 ns, rise time (tr) is 30 ns, turn-off delay time (td(off)) is 23 ns, and fall time (tf) is 50 ns.
- What is the total gate charge for the STF2HNK60Z?
The total gate charge (Qg) is between 11 and 15 nC.
- What are the primary applications of the STF2HNK60Z?
The primary applications include switching applications such as power supplies, motor control, high-frequency switching circuits, and industrial and automotive power management systems.
- What is the maximum total power dissipation at 25 °C for the STF2HNK60Z?
The maximum total power dissipation (PTOT) at 25 °C is 20 W.
