STQ2HNK60ZR-AP
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STMicroelectronics STQ2HNK60ZR-AP

Manufacturer No:
STQ2HNK60ZR-AP
Manufacturer:
STMicroelectronics
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 600V 500MA TO92-3
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STQ2HNK60ZR-AP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH technology. This device is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. It is packaged in a TO-92 Ammopack, ensuring compact and efficient use in various electronic systems.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25 °C500mA
Continuous Drain Current (ID) at TC = 100 °C320mA
Pulsed Drain Current (IDM)2A
Total Power Dissipation (PTOT) at TL = 25 °C3W
Static Drain-Source On-Resistance (RDS(on))4.8Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Source-Drain Current (ISD)2A
Forward On Voltage (VSD)1.6V

Key Features

  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected
  • Extremely high dv/dt capability
  • ESD improved capability

Applications

The STQ2HNK60ZR-AP is primarily used in switching applications, where its high voltage handling, low on-resistance, and high dv/dt capability are crucial. These applications include power supplies, motor control, and other high-voltage switching circuits.

Q & A

  1. What is the drain-source voltage rating of the STQ2HNK60ZR-AP?
    The drain-source voltage rating is 600 V.
  2. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current at 25 °C is 500 mA.
  3. What is the typical on-resistance of the STQ2HNK60ZR-AP?
    The typical on-resistance is 4.8 Ω.
  4. What is the total power dissipation at 25 °C?
    The total power dissipation at 25 °C is 3 W.
  5. Is the STQ2HNK60ZR-AP Zener-protected?
    Yes, the STQ2HNK60ZR-AP is Zener-protected.
  6. What is the gate-source voltage range?
    The gate-source voltage range is ±30 V.
  7. What is the package type of the STQ2HNK60ZR-AP?
    The package type is TO-92 Ammopack.
  8. What are the primary applications of the STQ2HNK60ZR-AP?
    The primary applications include switching applications such as power supplies and motor control.
  9. Does the STQ2HNK60ZR-AP have ESD protection?
    Yes, it has improved ESD capability.
  10. What is the reverse recovery time of the source-drain diode?
    The reverse recovery time is approximately 178 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Similar Products

Part Number STQ2HNK60ZR-AP STQ2NK60ZR-AP
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc) 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1A, 10V 8Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V 170 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Tc) 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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