Overview
The STQ2HNK60ZR-AP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH technology. This device is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. It is packaged in a TO-92 Ammopack, ensuring compact and efficient use in various electronic systems.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 600 | V |
Gate-Source Voltage (VGS) | ±30 | V |
Continuous Drain Current (ID) at TC = 25 °C | 500 | mA |
Continuous Drain Current (ID) at TC = 100 °C | 320 | mA |
Pulsed Drain Current (IDM) | 2 | A |
Total Power Dissipation (PTOT) at TL = 25 °C | 3 | W |
Static Drain-Source On-Resistance (RDS(on)) | 4.8 | Ω |
Gate Threshold Voltage (VGS(th)) | 3 - 4.5 | V |
Source-Drain Current (ISD) | 2 | A |
Forward On Voltage (VSD) | 1.6 | V |
Key Features
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Zener-protected
- Extremely high dv/dt capability
- ESD improved capability
Applications
The STQ2HNK60ZR-AP is primarily used in switching applications, where its high voltage handling, low on-resistance, and high dv/dt capability are crucial. These applications include power supplies, motor control, and other high-voltage switching circuits.
Q & A
- What is the drain-source voltage rating of the STQ2HNK60ZR-AP?
The drain-source voltage rating is 600 V. - What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 500 mA. - What is the typical on-resistance of the STQ2HNK60ZR-AP?
The typical on-resistance is 4.8 Ω. - What is the total power dissipation at 25 °C?
The total power dissipation at 25 °C is 3 W. - Is the STQ2HNK60ZR-AP Zener-protected?
Yes, the STQ2HNK60ZR-AP is Zener-protected. - What is the gate-source voltage range?
The gate-source voltage range is ±30 V. - What is the package type of the STQ2HNK60ZR-AP?
The package type is TO-92 Ammopack. - What are the primary applications of the STQ2HNK60ZR-AP?
The primary applications include switching applications such as power supplies and motor control. - Does the STQ2HNK60ZR-AP have ESD protection?
Yes, it has improved ESD capability. - What is the reverse recovery time of the source-drain diode?
The reverse recovery time is approximately 178 ns.