Overview
The STB55NF06T4 is a medium-voltage N-channel power MOSFET developed by STMicroelectronics using their unique STripFET process. This process is designed to minimize input capacitance and gate charge, making the device suitable for high-efficiency isolated DC-DC converters in telecom, computer, and other applications requiring low gate charge driving.
The MOSFET is part of STMicroelectronics’ portfolio of power MOSFETs, which are known for their high performance and reliability in various industrial and automotive applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 60 | V |
| Gate-Source Voltage (Vgs) | ±20 | V |
| Drain Current (continuous) at TC = 25 °C | 50 | A |
| Drain Current (continuous) at TC = 100 °C | 35 | A |
| Drain Current (pulsed) | 200 | A |
| Total Dissipation at TC = 25 °C | 110 | W |
| Maximum Junction Temperature | 175 | °C |
| Static Drain-Source On-State Resistance (Rds(on)) | 0.015 - 0.018 | Ω |
| Input Capacitance (Ciss) | 1300 | pF |
| Output Capacitance (Coss) | 300 | pF |
| Package | D²PAK |
Key Features
- 100% avalanche tested for robustness and reliability.
- Exceptional dv/dt capability, making it suitable for high-frequency applications.
- Low input capacitance and gate charge due to the STripFET process.
- Ideal for use as primary switches in advanced high-efficiency isolated DC-DC converters.
- Suitable for applications requiring low gate charge driving, such as telecom and computer systems.
- Zener-protected and enhanced trench gate structure for improved performance.
Applications
- Switching applications in high-efficiency isolated DC-DC converters.
- Telecom and computer systems requiring low gate charge driving.
- Industrial and automotive applications due to its robustness and reliability.
- Flyback converters and LED lighting systems.
Q & A
- What is the maximum drain-source voltage of the STB55NF06T4?
The maximum drain-source voltage (Vds) is 60 V.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 50 A.
- What is the maximum junction temperature for this MOSFET?
The maximum junction temperature is 175 °C).
- What is the typical on-state resistance (Rds(on)) of the STB55NF06T4?
The typical on-state resistance (Rds(on)) is between 0.015 and 0.018 Ω).
- What package types are available for the STB55NF06T4?
The STB55NF06T4 is available in D²PAK, TO-220, and TO-220FP packages).
- Is the STB55NF06T4 100% avalanche tested?
- What are some typical applications for the STB55NF06T4?
- What is the maximum gate-source voltage for the STB55NF06T4?
- Does the STB55NF06T4 have any special protection features?
- What is the storage temperature range for the STB55NF06T4?
