STB55NF06LT4
  • Share:

STMicroelectronics STB55NF06LT4

Manufacturer No:
STB55NF06LT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 55A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB55NF06LT4 is a medium-voltage N-channel power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II family, known for its high packing density, low on-resistance, and rugged avalanche characteristics. The STB55NF06LT4 is designed for a wide range of industrial and automotive applications, offering exceptional performance and reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 60 V
Gate-source voltage (VGS) ±16 V
Drain current (continuous) at TC = 25°C (ID) 55 A
Drain current (continuous) at TC = 100°C (ID) 39 A
Pulse drain current (IDM) 220 A
Total dissipation at TC = 25°C (PTOT) 95 W
Derating factor 0.63 W/°C
Static drain-source on resistance (RDS(on)) at VGS = 10V, ID = 27.5A <0.018 Ω
Thermal resistance junction-case (Rthj-case) 1.58 °C/W
Thermal resistance junction-ambient (Rthj-a) 62.5 °C/W
Maximum lead temperature for soldering purpose (Tl) 300 °C

Key Features

  • Exceptional dv/dt capability: Ensures robust performance in high-frequency switching applications.
  • 100% avalanche tested: Provides rugged avalanche characteristics, enhancing reliability.
  • Low on-resistance: Achieved through STMicroelectronics' unique 'Single Feature Size™' strip-based process, resulting in high packing density.
  • High drain current capability: Supports continuous drain current of up to 55A at 25°C and 39A at 100°C.
  • ECOPACK® packages: Lead-free second level interconnect, compliant with JEDEC Standard JESD97, meeting environmental requirements.

Applications

  • Industrial applications: Suitable for various industrial power management and control systems.
  • Automotive applications: Designed for use in automotive systems requiring high reliability and performance.
  • Switching applications: Ideal for DC-DC converters, motor control, and other high-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STB55NF06LT4?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the continuous drain current (ID) at 25°C and 100°C?

    The continuous drain current (ID) is 55A at 25°C and 39A at 100°C.

  3. What is the static drain-source on resistance (RDS(on)) at VGS = 10V and ID = 27.5A?

    The static drain-source on resistance (RDS(on)) is less than 0.018Ω.

  4. What are the thermal resistance values for junction-case and junction-ambient?

    The thermal resistance junction-case (Rthj-case) is 1.58°C/W, and the thermal resistance junction-ambient (Rthj-a) is 62.5°C/W.

  5. What is the maximum lead temperature for soldering purpose?

    The maximum lead temperature for soldering purpose is 300°C.

  6. What are the key features of the STB55NF06LT4?

    The key features include exceptional dv/dt capability, 100% avalanche tested, low on-resistance, high drain current capability, and ECOPACK® packages.

  7. In which applications is the STB55NF06LT4 commonly used?

    The STB55NF06LT4 is commonly used in industrial, automotive, and switching applications.

  8. What is the significance of the 'Single Feature Size™' strip-based process?

    The 'Single Feature Size™' strip-based process results in high packing density, low on-resistance, and rugged avalanche characteristics.

  9. Is the STB55NF06LT4 available in lead-free packages?
  10. What is the derating factor for the STB55NF06LT4?

    The derating factor is 0.63 W/°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V, 5V
Rds On (Max) @ Id, Vgs:18mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id:4.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):95W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.28
361

Please send RFQ , we will respond immediately.

Same Series
STP55NF06L
STP55NF06L
MOSFET N-CH 60V 55A TO220AB

Similar Products

Part Number STB55NF06LT4 STB55NF06T4 STB55NF03LT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 50A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 5V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 27.5A, 10V 18mOhm @ 27.5A, 10V 13mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 4.7V @ 250µA 4V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4.5 V 60 nC @ 10 V 27 nC @ 4.5 V
Vgs (Max) ±16V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 1300 pF @ 25 V 1265 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 95W (Tc) 110W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC