STB55NF06LT4
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STMicroelectronics STB55NF06LT4

Manufacturer No:
STB55NF06LT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 55A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB55NF06LT4 is a medium-voltage N-channel power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II family, known for its high packing density, low on-resistance, and rugged avalanche characteristics. The STB55NF06LT4 is designed for a wide range of industrial and automotive applications, offering exceptional performance and reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 60 V
Gate-source voltage (VGS) ±16 V
Drain current (continuous) at TC = 25°C (ID) 55 A
Drain current (continuous) at TC = 100°C (ID) 39 A
Pulse drain current (IDM) 220 A
Total dissipation at TC = 25°C (PTOT) 95 W
Derating factor 0.63 W/°C
Static drain-source on resistance (RDS(on)) at VGS = 10V, ID = 27.5A <0.018 Ω
Thermal resistance junction-case (Rthj-case) 1.58 °C/W
Thermal resistance junction-ambient (Rthj-a) 62.5 °C/W
Maximum lead temperature for soldering purpose (Tl) 300 °C

Key Features

  • Exceptional dv/dt capability: Ensures robust performance in high-frequency switching applications.
  • 100% avalanche tested: Provides rugged avalanche characteristics, enhancing reliability.
  • Low on-resistance: Achieved through STMicroelectronics' unique 'Single Feature Size™' strip-based process, resulting in high packing density.
  • High drain current capability: Supports continuous drain current of up to 55A at 25°C and 39A at 100°C.
  • ECOPACK® packages: Lead-free second level interconnect, compliant with JEDEC Standard JESD97, meeting environmental requirements.

Applications

  • Industrial applications: Suitable for various industrial power management and control systems.
  • Automotive applications: Designed for use in automotive systems requiring high reliability and performance.
  • Switching applications: Ideal for DC-DC converters, motor control, and other high-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STB55NF06LT4?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the continuous drain current (ID) at 25°C and 100°C?

    The continuous drain current (ID) is 55A at 25°C and 39A at 100°C.

  3. What is the static drain-source on resistance (RDS(on)) at VGS = 10V and ID = 27.5A?

    The static drain-source on resistance (RDS(on)) is less than 0.018Ω.

  4. What are the thermal resistance values for junction-case and junction-ambient?

    The thermal resistance junction-case (Rthj-case) is 1.58°C/W, and the thermal resistance junction-ambient (Rthj-a) is 62.5°C/W.

  5. What is the maximum lead temperature for soldering purpose?

    The maximum lead temperature for soldering purpose is 300°C.

  6. What are the key features of the STB55NF06LT4?

    The key features include exceptional dv/dt capability, 100% avalanche tested, low on-resistance, high drain current capability, and ECOPACK® packages.

  7. In which applications is the STB55NF06LT4 commonly used?

    The STB55NF06LT4 is commonly used in industrial, automotive, and switching applications.

  8. What is the significance of the 'Single Feature Size™' strip-based process?

    The 'Single Feature Size™' strip-based process results in high packing density, low on-resistance, and rugged avalanche characteristics.

  9. Is the STB55NF06LT4 available in lead-free packages?
  10. What is the derating factor for the STB55NF06LT4?

    The derating factor is 0.63 W/°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V, 5V
Rds On (Max) @ Id, Vgs:18mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id:4.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):95W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STP55NF06L
STP55NF06L
MOSFET N-CH 60V 55A TO220AB

Similar Products

Part Number STB55NF06LT4 STB55NF06T4 STB55NF03LT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 50A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 5V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 27.5A, 10V 18mOhm @ 27.5A, 10V 13mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 4.7V @ 250µA 4V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4.5 V 60 nC @ 10 V 27 nC @ 4.5 V
Vgs (Max) ±16V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 1300 pF @ 25 V 1265 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 95W (Tc) 110W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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