Overview
The SCTH40N120G2V7AG is an automotive-grade silicon carbide (SiC) Power MOSFET developed by STMicroelectronics. This device leverages ST's advanced 2nd generation SiC MOSFET technology, offering high performance and reliability. It is packaged in an H2PAK-7 format, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 1200 V |
| Typical Static Drain-Source On-Resistance (Rds(on)) | 75 mΩ |
| Maximum Static Drain-Source On-Resistance (Rds(on)) | 105 mΩ |
| Drain Current (Id) | 33 A |
| Power Dissipation (Pd) | 250 W (at Tc) |
| Package | H2PAK-7 |
Key Features
- High voltage rating of 1200 V, making it suitable for high-power applications.
- Low on-resistance (Rds(on)) of 75 mΩ (typ.) and 105 mΩ (max.), reducing energy losses.
- High current capability of 33 A.
- Automotive-grade reliability and durability.
- Advanced 2nd generation SiC MOSFET technology for improved performance.
Applications
The SCTH40N120G2V7AG is designed for various high-power applications, including but not limited to:
- Electric vehicles and hybrid electric vehicles.
- Power supplies and DC-DC converters.
- Industrial power systems and motor drives.
- Renewable energy systems such as solar and wind power.
Q & A
- What is the drain-source voltage rating of the SCTH40N120G2V7AG? The drain-source voltage rating is 1200 V.
- What is the typical static drain-source on-resistance of the SCTH40N120G2V7AG? The typical static drain-source on-resistance is 75 mΩ.
- What is the maximum static drain-source on-resistance of the SCTH40N120G2V7AG? The maximum static drain-source on-resistance is 105 mΩ.
- What is the drain current rating of the SCTH40N120G2V7AG? The drain current rating is 33 A.
- What package type is the SCTH40N120G2V7AG available in? The SCTH40N120G2V7AG is available in an H2PAK-7 package.
- What are some typical applications for the SCTH40N120G2V7AG? Typical applications include electric vehicles, power supplies, industrial power systems, and renewable energy systems.
- What technology is used in the SCTH40N120G2V7AG? The SCTH40N120G2V7AG uses ST's advanced 2nd generation SiC MOSFET technology.
- Is the SCTH40N120G2V7AG automotive-grade? Yes, the SCTH40N120G2V7AG is automotive-grade.
- What is the power dissipation rating of the SCTH40N120G2V7AG? The power dissipation rating is 250 W (at Tc).
- Where can I find detailed specifications for the SCTH40N120G2V7AG? Detailed specifications can be found on STMicroelectronics' official website, as well as on distributor sites like Mouser and Digi-Key.
