Overview
The STD5406NT4G-VF01 is a high-performance N-Channel power MOSFET produced by onsemi. This device is housed in a DPAK (TO-252-3) package and is designed for high-current applications. It features a low on-resistance (RDS(on)) and high current capability, making it suitable for various automotive and industrial applications. The STD5406NT4G-VF01 is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards. Additionally, it is Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 70 | A |
| Continuous Drain Current (TC = 125°C) | ID | 40 | A |
| Power Dissipation (TC = 25°C) | PD | 100 | W |
| Junction-to-Case Thermal Resistance | RθJC | 1.5 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 49 | °C/W |
| On-Resistance (Typical at VGS = 10 V, ID = 30 A) | RDS(on) | 8.7 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 3.5 | V |
| Gate Charge (Typical at VGS = 10 V) | QG | 45 nC | nC |
Key Features
- Low On-Resistance (RDS(on)): Ensures minimal power loss and high efficiency in high-current applications.
- High Current Capability: Supports up to 70 A of continuous drain current at 25°C.
- Low Gate Charge: Facilitates faster switching times and reduced power consumption.
- AEC-Q101 Qualified and PPAP Capable: Meets stringent automotive standards for reliability and quality.
- Pb-free and RoHS Compliant: Aligns with environmental regulations, ensuring sustainability.
Applications
- Electronic Brake Systems: Used in automotive braking systems for reliable and efficient operation.
- Electronic Power Steering: Enhances the performance and efficiency of power steering systems in vehicles.
- Bridge Circuits: Suitable for use in bridge configurations for motor control and other high-power applications.
Q & A
- Q: What is the maximum drain-to-source voltage of the STD5406NT4G-VF01?
A: The maximum drain-to-source voltage (VDSS) is 40 V.
- Q: What is the continuous drain current rating at 25°C?
A: The continuous drain current (ID) at 25°C is 70 A.
- Q: Is the STD5406NT4G-VF01 AEC-Q101 qualified?
A: Yes, the STD5406NT4G-VF01 is AEC-Q101 qualified and PPAP capable.
- Q: What is the typical on-resistance (RDS(on)) of the device?
A: The typical on-resistance (RDS(on)) is 8.7 mΩ at VGS = 10 V and ID = 30 A.
- Q: What are the thermal resistance values for junction-to-case and junction-to-ambient?
A: The junction-to-case thermal resistance (RθJC) is 1.5 °C/W, and the junction-to-ambient thermal resistance (RθJA) is 49 °C/W.
- Q: What is the gate charge (QG) at VGS = 10 V?
A: The gate charge (QG) at VGS = 10 V is typically 45 nC.
- Q: Is the STD5406NT4G-VF01 Pb-free and RoHS compliant?
A: Yes, the device is Pb-free and RoHS compliant.
- Q: What are some common applications for the STD5406NT4G-VF01?
A: Common applications include electronic brake systems, electronic power steering, and bridge circuits.
- Q: How can I ensure the authenticity of the STD5406NT4G-VF01 from onsemi?
A: Ensure you purchase from authorized distributors or directly from onsemi to guarantee authenticity.
- Q: What is the warranty period for the STD5406NT4G-VF01?
A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.
