SBSS84LT1G
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onsemi SBSS84LT1G

Manufacturer No:
SBSS84LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBSS84LT1G is a single P-Channel power MOSFET manufactured by onsemi. This device is part of the BSS84L series and is packaged in a compact SOT-23-3 (SC-59, TO-236) surface mount package. It is designed to offer high performance and reliability in various electronic applications. The SBSS84LT1G is Pb-free and RoHS compliant, making it suitable for use in a wide range of modern electronic systems.

Key Specifications

Attribute Value Unit
FET Type P-Channel
Drain-to-Source Voltage (Vdss) 50 Vdc
Drain-Source On Resistance (Rds(on)) 10 Ω
Rated Power Dissipation (Pd) 225 mW
Gate Charge (Qg) 6000 pC
Continuous Drain Current (Id) 130 mA
Pulsed Drain Current (Idm) 520 mA
Gate-to-Source Voltage (Vgs) ±20 Vdc
Operating and Storage Temperature Range -55 to 150 °C
Package Style SOT-23-3 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Compact Package: The SBSS84LT1G is packaged in a SOT-23-3 surface mount package, which saves board space and is ideal for compact designs.
  • High Voltage Rating: With a drain-to-source voltage rating of 50 V, this MOSFET is suitable for applications requiring high voltage handling.
  • Low On-Resistance: The device has a maximum drain-source on-resistance of 10 Ω, ensuring efficient operation with minimal power loss.
  • High Current Capability: It can handle continuous drain currents up to 130 mA and pulsed currents up to 520 mA.
  • Environmental Compliance: The SBSS84LT1G is Pb-free and RoHS compliant, making it environmentally friendly and suitable for modern electronic systems.
  • AEC-Q101 Qualified: This MOSFET is qualified to the AEC-Q101 standard, making it suitable for automotive and other applications requiring unique site and control change requirements.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, the SBSS84LT1G is suitable for use in automotive applications such as power management and control circuits.
  • Power Management: It can be used in various power management circuits, including voltage regulators, DC-DC converters, and power switches.
  • Consumer Electronics: The MOSFET is applicable in consumer electronics such as audio equipment, gaming consoles, and other portable devices.
  • Industrial Control: It can be used in industrial control systems, motor control circuits, and other high-reliability applications.

Q & A

  1. What is the drain-to-source voltage rating of the SBSS84LT1G?

    The drain-to-source voltage rating of the SBSS84LT1G is 50 Vdc.

  2. What is the maximum drain-source on-resistance of the SBSS84LT1G?

    The maximum drain-source on-resistance of the SBSS84LT1G is 10 Ω.

  3. What is the continuous drain current rating of the SBSS84LT1G?

    The continuous drain current rating of the SBSS84LT1G is 130 mA.

  4. Is the SBSS84LT1G Pb-free and RoHS compliant?

    Yes, the SBSS84LT1G is Pb-free and RoHS compliant.

  5. What is the package style of the SBSS84LT1G?

    The SBSS84LT1G is packaged in a SOT-23-3 (SC-59, TO-236) surface mount package.

  6. What are the operating and storage temperature ranges for the SBSS84LT1G?

    The operating and storage temperature ranges for the SBSS84LT1G are -55 to 150°C.

  7. Is the SBSS84LT1G AEC-Q101 qualified?

    Yes, the SBSS84LT1G is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.

  8. What is the gate charge of the SBSS84LT1G?

    The gate charge of the SBSS84LT1G is 6000 pC.

  9. What are some typical applications of the SBSS84LT1G?

    The SBSS84LT1G is typically used in automotive systems, power management circuits, consumer electronics, and industrial control systems.

  10. How many devices are typically shipped per reel?

    The SBSS84LT1G is typically shipped in reels of 3000 devices.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:36 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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