BVSS84LT1G
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onsemi BVSS84LT1G

Manufacturer No:
BVSS84LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BVSS84LT1G is a P-channel MOSFET manufactured by ON Semiconductor, designed for use in low-voltage and low-power applications. This component is known for its high performance, low on-resistance, and compact SOT-23 package. It is particularly suitable for applications requiring efficient switching and power management.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Drain-Source Voltage VDSS -50 - - Vdc
Gate-Source Voltage - Continuous VGS - - ±20 Vdc
Continuous Drain Current ID -1.3 - - A
Pulsed Drain Current (tp ≤ 10 μs) IDM -5.2 - - A
Threshold Voltage VGS(th) -0.9 - -2.0 Vdc
Static Drain-Source On-Resistance RDS(on) - 4.7 10 Ω
Operating and Storage Temperature Range TJ, Tstg -55 - 150 °C
Thermal Resistance - Junction-to-Ambient RθJA - 377.2 - °C/W

Key Features

  • Low Threshold Voltage: Enables operation in low-voltage environments, making it suitable for low-power applications.
  • Low On-Resistance: Provides efficient switching and reduces power loss, enhancing overall performance.
  • Compact Package: The SOT-23 package is space-saving, ideal for applications with size constraints.
  • High Performance: Offers reliable performance in various circuits, ensuring consistent operation.
  • Enhanced Efficiency: Optimized for low-power applications, contributing to better power management and extended battery life in portable devices.

Applications

  • Low-Power Circuits: Commonly used in signal switching and voltage regulation where efficient power management is crucial.
  • Portable Electronics: Used in smartphones, tablets, and other portable devices for power management and efficient battery usage.
  • LED Lighting: Utilized to control current flow and brightness levels in energy-efficient lighting systems.
  • Sensor Interfaces: Helps in amplification and signal conditioning in sensor interfacing circuits, ensuring accurate data acquisition and processing.

Q & A

  1. What is the BVSS84LT1G MOSFET used for?

    The BVSS84LT1G is used in low-voltage and low-power applications, such as signal switching, voltage regulation, and power management in portable electronics and LED lighting.

  2. What are the key features of the BVSS84LT1G?

    The key features include a low threshold voltage, low on-resistance, compact SOT-23 package, high performance, and enhanced efficiency.

  3. What is the maximum drain-source voltage of the BVSS84LT1G?

    The maximum drain-source voltage (VDSS) is -50 Vdc.

  4. What is the continuous drain current of the BVSS84LT1G?

    The continuous drain current (ID) is -1.3 A.

  5. What is the threshold voltage range of the BVSS84LT1G?

    The threshold voltage (VGS(th)) range is from -0.9 V to -2.0 V.

  6. Can the BVSS84LT1G be used as a direct replacement for the BSS84?

    Yes, but the BVSS84LT1G is optimized for low-voltage applications with a lower threshold voltage and may offer better efficiency in such scenarios compared to the BSS84.

  7. What is the operating temperature range of the BVSS84LT1G?

    The operating and storage temperature range is from -55°C to 150°C.

  8. What package type does the BVSS84LT1G come in?

    The BVSS84LT1G comes in a SOT-23 package.

  9. Is the BVSS84LT1G RoHS compliant?

    Yes, the BVSS84LT1G is Pb-free and RoHS compliant.

  10. What are some common applications of the BVSS84LT1G in portable electronics?

    It is used for power management and efficient battery usage in devices like smartphones and tablets.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:36 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS84LT1G
BSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3
SBSS84LT1G
SBSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3

Similar Products

Part Number BVSS84LT1G BVSS84LT3G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 10 V 2.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 5 V 36 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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