Overview
The NVTFS5C670NLWFTAG is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. The MOSFET features a small footprint in a WDFNW8 package, which is Pb-free and RoHS compliant, ensuring environmental sustainability and reliability.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 60 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Continuous Drain Current (TC = 25°C) | ID | 70 | A |
Power Dissipation (TC = 25°C) | PD | 63 | W |
Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 440 | A |
Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
Source Current (Body Diode) | IS | 68 | A |
Single Pulse Drain-to-Source Avalanche Energy | EAS | 166 | mJ |
Lead Temperature for Soldering Purposes | TL | 260 | °C |
Junction-to-Case Thermal Resistance | RθJC | 2.4 | °C/W |
Junction-to-Ambient Thermal Resistance | RθJA | 47 | °C/W |
Drain-to-Source On Resistance (VGS = 10 V, ID = 35 A) | RDS(on) | 6.8 mΩ | mΩ |
Key Features
- Small Footprint (3.3 x 3.3 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- AEC-Q101 Qualified and PPAP Capable
- Pb-free and RoHS Compliant
- Wettable Flanks Product (NVTFS5C670NLWF)
Applications
The NVTFS5C670NLWFTAG MOSFET is suitable for various high-power applications, including but not limited to:
- Automotive Systems: Such as electric vehicle charging, battery management, and power steering.
- Industrial Power Supplies: High-efficiency power conversion and switching.
- Renewable Energy Systems: Solar and wind power inverters.
- Consumer Electronics: High-power DC-DC converters and power management.
Q & A
- What is the maximum drain-to-source voltage of the NVTFS5C670NLWFTAG MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 V. - What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 70 A. - What is the thermal resistance from junction to case?
The junction-to-case thermal resistance (RθJC) is 2.4 °C/W. - Is the NVTFS5C670NLWFTAG Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant. - What is the typical on-resistance at VGS = 10 V and ID = 35 A?
The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 35 A is 6.8 mΩ. - What are the operating junction and storage temperature ranges?
The operating junction and storage temperature ranges are from −55°C to +175°C. - What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 166 mJ. - What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes (TL) is 260°C. - Is the device AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable. - What package type does the NVTFS5C670NLWFTAG come in?
The device comes in a WDFNW8 package.