NVTFS5C670NLWFTAG
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onsemi NVTFS5C670NLWFTAG

Manufacturer No:
NVTFS5C670NLWFTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 16A/70A 8WDFN
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NVTFS5C670NLWFTAG is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. The MOSFET features a small footprint in a WDFNW8 package, which is Pb-free and RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TC = 25°C)ID70A
Power Dissipation (TC = 25°C)PD63W
Pulsed Drain Current (TA = 25°C, tp = 10 μs)IDM440A
Operating Junction and Storage Temperature RangeTJ, Tstg−55 to +175°C
Source Current (Body Diode)IS68A
Single Pulse Drain-to-Source Avalanche EnergyEAS166mJ
Lead Temperature for Soldering PurposesTL260°C
Junction-to-Case Thermal ResistanceRθJC2.4°C/W
Junction-to-Ambient Thermal ResistanceRθJA47°C/W
Drain-to-Source On Resistance (VGS = 10 V, ID = 35 A)RDS(on)6.8 mΩ

Key Features

  • Small Footprint (3.3 x 3.3 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-free and RoHS Compliant
  • Wettable Flanks Product (NVTFS5C670NLWF)

Applications

The NVTFS5C670NLWFTAG MOSFET is suitable for various high-power applications, including but not limited to:

  • Automotive Systems: Such as electric vehicle charging, battery management, and power steering.
  • Industrial Power Supplies: High-efficiency power conversion and switching.
  • Renewable Energy Systems: Solar and wind power inverters.
  • Consumer Electronics: High-power DC-DC converters and power management.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5C670NLWFTAG MOSFET?
    The maximum drain-to-source voltage (VDSS) is 60 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current (ID) at 25°C is 70 A.
  3. What is the thermal resistance from junction to case?
    The junction-to-case thermal resistance (RθJC) is 2.4 °C/W.
  4. Is the NVTFS5C670NLWFTAG Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  5. What is the typical on-resistance at VGS = 10 V and ID = 35 A?
    The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 35 A is 6.8 mΩ.
  6. What are the operating junction and storage temperature ranges?
    The operating junction and storage temperature ranges are from −55°C to +175°C.
  7. What is the single pulse drain-to-source avalanche energy?
    The single pulse drain-to-source avalanche energy (EAS) is 166 mJ.
  8. What is the lead temperature for soldering purposes?
    The lead temperature for soldering purposes (TL) is 260°C.
  9. Is the device AEC-Q101 qualified?
    Yes, the device is AEC-Q101 qualified and PPAP capable.
  10. What package type does the NVTFS5C670NLWFTAG come in?
    The device comes in a WDFNW8 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS5C670NLTAG
NVTFS5C670NLTAG
MOSFET N-CH 60V 16A/70A 8WDFN

Similar Products

Part Number NVTFS5C670NLWFTAG NVTFS5C680NLWFTAG NVTFS5C673NLWFTAG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 70A (Tc) 7.82A (Ta), 20A (Tc) 13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 35A, 10V 26.5mOhm @ 10A, 10V 9.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 6 nC @ 10 V 9.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 327 pF @ 25 V 880 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.2W (Ta), 63W (Tc) 3W (Ta), 20W (Tc) 3.1W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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