NVTFS5C680NLWFTAG
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onsemi NVTFS5C680NLWFTAG

Manufacturer No:
NVTFS5C680NLWFTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 7.82A/20A 8WDFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NVTFS5C680NLWFTAG is a high-performance single N-Channel Power MOSFET designed by onsemi. This component is part of onsemi's portfolio of power MOSFETs, known for their reliability and efficiency in various power management applications. The NVTFS5C680NLWFTAG is housed in an 8-WDFN (3.3x3.3 mm) surface mount package, making it suitable for compact and high-density designs.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Drain-Source Voltage (Vds)60 V
Maximum Continuous Drain Current (Id)20 A (Tc), 7.82 A (Ta)
On-Resistance (Rds(on))26.5 mΩ
Package Type8-WDFN (3.3x3.3 mm)
Operating Temperature Range-55°C to 150°C
Power Dissipation (Pd)3 W (Ta), 20 W (Tc)

Key Features

  • High-performance N-Channel Power MOSFET with low on-resistance (Rds(on)) of 26.5 mΩ, ensuring efficient power management.
  • Maximum drain-source voltage of 60 V and maximum continuous drain current of 20 A (Tc), making it suitable for high-power applications.
  • Compact 8-WDFN (3.3x3.3 mm) surface mount package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 150°C, enhancing reliability in diverse environments.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including battery management and power steering.
  • Industrial control and automation.
  • Consumer electronics requiring high-efficiency power management.

Q & A

  1. What is the maximum drain-source voltage of the NVTFS5C680NLWFTAG?
    The maximum drain-source voltage is 60 V.
  2. What is the on-resistance (Rds(on)) of this MOSFET?
    The on-resistance is 26.5 mΩ.
  3. What is the maximum continuous drain current?
    The maximum continuous drain current is 20 A (Tc) and 7.82 A (Ta).
  4. What is the package type of the NVTFS5C680NLWFTAG?
    The package type is 8-WDFN (3.3x3.3 mm).
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  7. Is the NVTFS5C680NLWFTAG suitable for high-density designs?
    Yes, due to its compact 8-WDFN package.
  8. What is the power dissipation (Pd) of this MOSFET?
    The power dissipation is 3 W (Ta) and 20 W (Tc).
  9. Where can I find detailed specifications for the NVTFS5C680NLWFTAG?
    Detailed specifications can be found on the onsemi website or through distributors like Digi-Key and Mouser.
  10. Is the NVTFS5C680NLWFTAG Pb-Free?
    Yes, the NVTFS5C680NLWFTAG is Pb-Free.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7.82A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:26.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:327 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 20W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS5C680NLWFTAG
NVTFS5C680NLWFTAG
MOSFET N-CH 60V 7.82A/20A 8WDFN

Similar Products

Part Number NVTFS5C680NLWFTAG NVTFS5C670NLWFTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7.82A (Ta), 20A (Tc) 16A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 26.5mOhm @ 10A, 10V 6.8mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 327 pF @ 25 V 1400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 20W (Tc) 3.2W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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