NVMTS0D4N04CTXG
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onsemi NVMTS0D4N04CTXG

Manufacturer No:
NVMTS0D4N04CTXG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 79.8A/558A 8DFNW
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMTS0D4N04CTXG is a single N-Channel MOSFET produced by onsemi, designed for high-performance power management applications. This device is characterized by its compact footprint and advanced electrical characteristics, making it suitable for a variety of power switching and control tasks.

Key Specifications

ParameterSymbolValueUnit
Transistor Polarity-N-Channel-
Number of Channels-1 Channel-
Drain-Source Breakdown Voltage (Vds)Vds40 VV
Continuous Drain Current (Id)Id558 AA
On-Resistance (Rds(on))Rds(on)0.45 mΩ
Junction-to-Case Thermal Resistance (RθJC)RθJC0.61 °C/W°C/W

Key Features

  • Small Footprint: The device features a compact 8x8 mm footprint, ideal for space-constrained designs.
  • Low Rds(on): With an on-resistance of 0.45 mΩ, it minimizes conduction losses.
  • Low QG and Capacitance: These characteristics help in minimizing driver losses, enhancing overall efficiency.

Applications

The NVMTS0D4N04CTXG MOSFET is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive and industrial power management systems.
  • High-frequency switching applications.

Q & A

  1. What is the drain-source breakdown voltage of the NVMTS0D4N04CTXG MOSFET?
    The drain-source breakdown voltage (Vds) is 40 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 558 A.
  3. What is the on-resistance (Rds(on)) of the NVMTS0D4N04CTXG?
    The on-resistance (Rds(on)) is 0.45 mΩ.
  4. What is the thermal resistance from junction to case (RθJC) for this device?
    The thermal resistance from junction to case (RθJC) is 0.61 °C/W.
  5. What are the key features of the NVMTS0D4N04CTXG MOSFET?
    The key features include a small footprint, low Rds(on), and low QG and capacitance.
  6. In what types of applications is the NVMTS0D4N04CTXG typically used?
    It is typically used in power supplies, DC-DC converters, motor control systems, automotive and industrial power management, and high-frequency switching applications.
  7. What is the polarity of the NVMTS0D4N04CTXG MOSFET?
    The polarity is N-Channel.
  8. How many channels does the NVMTS0D4N04CTXG MOSFET have?
    It has 1 channel.
  9. What is the significance of low QG and capacitance in this MOSFET?
    Low QG and capacitance help in minimizing driver losses, which enhances the overall efficiency of the system.
  10. Why is the small footprint of the NVMTS0D4N04CTXG important?
    The small footprint is important for space-constrained designs, allowing for more compact and efficient system layouts.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:79.8A (Ta), 558A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:251 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16500 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):5W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFNW (8.3x8.4)
Package / Case:8-PowerTDFN
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Similar Products

Part Number NVMTS0D4N04CTXG NVMTS0D6N04CTXG NVMTS0D7N04CTXG NVMTS0D4N04CLTXG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 79.8A (Ta), 558A (Tc) 533A (Tc) 51A (Ta), 430A (Tc) 553.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.45mOhm @ 50A, 10V 0.48mOhm @ 50A, 10V 0.67mOhm @ 50A, 10V 0.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 251 nC @ 10 V 187 nC @ 10 V 140 nC @ 10 V 163 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 16500 pF @ 20 V 11800 pF @ 20 V 9281 pF @ 25 V 20600 pF @ 20 V
FET Feature - - - -
Power Dissipation (Max) 5W 5W (Ta) 3.9W (Ta), 273W (Tc) 5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-DFNW (8.3x8.4) 8-DFNW (8.3x8.4) 8-DFNW (8.3x8.4) 8-DFNW (8.3x8.4)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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