NVMTS0D4N04CLTXG
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onsemi NVMTS0D4N04CLTXG

Manufacturer No:
NVMTS0D4N04CLTXG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 553.8A 8DFNW
Delivery:
Payment:
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Product Introduction

Overview

The NVMTS0D4N04CLTXG is a single N-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a small footprint of 8x8 mm, making it ideal for compact designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 553.8 A
Continuous Drain Current (TC = 100°C) ID 394.8 A
Power Dissipation (TC = 25°C) PD 244 W
Power Dissipation (TC = 100°C) PD 122 W
Junction-to-Case Thermal Resistance RθJC 0.61 °C/W
Junction-to-Ambient Thermal Resistance RθJA 30.1 °C/W
Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) RDS(on) 0.3 - 0.4
Gate Threshold Voltage VGS(TH) 1.0 - 2.5 V
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C

Key Features

  • Small footprint (8x8 mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable for automotive reliability
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Power tools
  • Battery-operated vacuums
  • UAV/Drones
  • Material handling
  • Battery Management Systems (BMS) and storage
  • Home automation

Q & A

  1. What is the maximum drain-to-source voltage of the NVMTS0D4N04CLTXG MOSFET?

    The maximum drain-to-source voltage is 40 V.

  2. What is the continuous drain current at 25°C and 100°C?

    The continuous drain current is 553.8 A at 25°C and 394.8 A at 100°C.

  3. What is the thermal resistance from junction to case and junction to ambient?

    The thermal resistance from junction to case is 0.61 °C/W, and from junction to ambient is 30.1 °C/W.

  4. What are the typical applications of this MOSFET?

    Typical applications include power tools, battery-operated vacuums, UAV/drones, material handling, BMS/storage, and home automation.

  5. Is the NVMTS0D4N04CLTXG MOSFET compliant with environmental regulations?

    Yes, it is Pb-free, halogen-free, and RoHS compliant.

  6. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0 to 2.5 V.

  7. What is the maximum operating junction temperature?

    The maximum operating junction temperature is 175°C.

  8. Is the MOSFET AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  9. What is the typical on-resistance at VGS = 10 V and ID = 50 A?

    The typical on-resistance is 0.3 to 0.4 mΩ.

  10. What are the dimensions of the package?

    The package dimensions are 8.30x8.40x1.10 mm.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:553.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:163 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20600 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):5W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFNW (8.3x8.4)
Package / Case:8-PowerTDFN
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Similar Products

Part Number NVMTS0D4N04CLTXG NVMTS0D4N04CTXG NVMTS0D7N04CLTXG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 553.8A (Tc) 79.8A (Ta), 558A (Tc) 67A (Ta), 433A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.4mOhm @ 50A, 10V 0.45mOhm @ 50A, 10V 0.63mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 163 nC @ 4.5 V 251 nC @ 10 V 205 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20600 pF @ 20 V 16500 pF @ 20 V 12238 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 5W (Ta) 5W 2.5W (Ta), 205W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-DFNW (8.3x8.4) 8-DFNW (8.3x8.4) 8-DFNW (8.3x8.4)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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