Overview
The NVMFS5C673NLAFT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 50 | A |
| Continuous Drain Current (TJ = 100°C) | ID | 35 | A |
| Power Dissipation (RJC, TJ = 25°C) | PD | 46 | W |
| Power Dissipation (RJA, TJ = 25°C) | PD | 3.6 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 290 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 25 A) | RDS(on) | 9.2 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 to 2.0 | V |
Key Features
- Small Footprint: Compact DFN5 package (5x6 mm) for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with a low on-resistance of 9.2 mΩ at VGS = 10 V and ID = 25 A.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Wettable Flank Option: Available in DFNW5 package with wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in high-current applications such as DC-DC converters, motor control, and power supplies.
- Industrial Control: Used in industrial control systems, including motor drives and power inverters.
- Consumer Electronics: Applicable in high-power consumer electronics requiring efficient power management.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C673NLAFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at TJ = 25°C?
The continuous drain current (ID) at TJ = 25°C is 50 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 25 A?
The on-resistance (RDS(on)) is 9.2 mΩ at VGS = 10 V and ID = 25 A.
- Is the NVMFS5C673NLAFT1G Pb-free and RoHS compliant?
- What are the operating junction and storage temperatures for this MOSFET?
The operating junction and storage temperatures range from −55°C to +175°C.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) ranges from 1.2 V to 2.0 V.
- What package options are available for this MOSFET?
The device is available in DFN5 and DFNW5 packages, with the latter offering wettable flanks for enhanced optical inspection.
- Is the NVMFS5C673NLAFT1G AEC-Q101 qualified?
- What are some typical applications for this MOSFET?
Typical applications include automotive systems, power management, industrial control, and high-power consumer electronics.
- What is the maximum pulsed drain current at TA = 25°C and tp = 10 μs?
The maximum pulsed drain current (IDM) is 290 A at TA = 25°C and tp = 10 μs.
