Overview
The NVMFS5C670NLAFT1G is a single N-channel power MOSFET produced by onsemi. This device is designed for compact and efficient designs, particularly in automotive and other high-performance applications. It features a small footprint in a 5x6 mm DFN5 package, making it ideal for space-constrained designs. The MOSFET is known for its low RDS(on) and low QG and capacitance, which minimize conduction and driver losses, respectively.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 71 | A |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 35 A) | RDS(on) | 5.1 - 6.1 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Junction-to-Case Thermal Resistance | RJC | 2.4 | °C/W |
| Junction-to-Ambient Thermal Resistance | RJA | 41 | °C/W |
Key Features
- Small Footprint: Compact 5x6 mm DFN5 package for space-efficient designs.
- Low RDS(on): Minimizes conduction losses with RDS(on) as low as 5.1 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses with low total gate charge (QG) and capacitance.
- Wettable Flank Option: Available with wettable flanks for enhanced optical inspection (NVMFS5C670NLWF).
- AEC-Q101 Qualified and PPAP Capable: Meets automotive standards for reliability and quality.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
The NVMFS5C670NLAFT1G is suitable for a variety of high-performance applications, including:
- Automotive systems: Ideal for power management in automotive electronics due to its AEC-Q101 qualification.
- Industrial power supplies: Used in high-efficiency power supply designs where low RDS(on) and low QG are crucial.
- Motor control: Suitable for motor drive applications requiring high current handling and low thermal resistance.
- Power management: Used in various power management circuits where compact design and high efficiency are necessary.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C670NLAFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current (ID) is 71 A at TC = 25°C.
- What is the typical RDS(on) at VGS = 10 V and ID = 35 A?
The typical RDS(on) is 6.1 mΩ at VGS = 10 V and ID = 35 A.
- Is the NVMFS5C670NLAFT1G Pb-Free and RoHS compliant?
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RJC) is 2.4 °C/W.
- What are the package options available for this MOSFET?
The device is available in DFN5 and DFNW5 (with wettable flanks) packages.
- Is the NVMFS5C670NLAFT1G AEC-Q101 qualified?
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.
- What are the typical applications for this MOSFET?
The device is typically used in automotive systems, industrial power supplies, motor control, and power management circuits.
- How does the wettable flank option benefit the device?
The wettable flank option enhances optical inspection, which is beneficial for quality control and reliability testing.
